论文信息 - Microwave rectification in ballistic nanojunctions at room temperature

Microwave rectification in ballistic nanojunctions at room temperature

Nanoelectronic junctions were fabricated by electron beam lithography and wet etching of modulation doped GaAs/AlGaAs heterostructures. Voltage differences between the branches of the junctions lead to rectification characteristics, which persist up to room temperature. We have investigated the high frequency properties of the rectification. A microwave injected into one branch generates a direct current through the nanojunction.

[1] Charles M. Lieber,et al. Logic Gates and Computation from Assembled Nanowire Building Blocks , 2001, Science.

[2] Lars Samuelson,et al. Bias-voltage-induced asymmetry in nanoelectronic Y-branches , 2001 .

[3] Axel Lorke,et al. Nonlinear Electron Transport in an Asymmetric Microjunction: A Ballistic Rectifier , 1998 .

[4] Hongqi Xu,et al. Electrical properties of three-terminal ballistic junctions , 2001 .

[5] D. Smith,et al. Quantum Point Contact Switches , 1995, Science.

[6] Mark Lee,et al. Wide bandwidth millimeter wave mixer using a diffusion cooled two-dimensional electron gas , 2001 .

[7] Peter J. Burke,et al. High frequency conductivity of the high-mobility two-dimensional electron gas , 2000 .

[8] Negative differential conductance in planar one-dimensional/zero-dimensional/one-dimensional GaAs/AlGaAs structures , 2000 .

[9] R. J. Brown,et al. One-dimensional ballistic resistor in hot-electron regime: nonlinear and negative differential resistance to 10 THz , 1989 .

[10] J. Mclean,et al. High frequency characteristics of in‐plane‐gate transistors , 1992 .

[11] Lars Thylén,et al. Analysis of an electron‐wave Y‐branch switch , 1992 .