Bound Exciton Emission of Zinc Selenide

Bound exciton emission and excitation spectra of the I2 and I3 lines were measured at 2 K for zinc selenide single crystals heat-treated in controlled partial pressures of constituent elements as a function of zinc or selenium pressure. The intensity of the I2 lines due to ClSe donors and InZn donors decreases with the increase in selenium pressure. Intensity variation of the I2 lines is considered to be concerned with the out-diffusion of Cl and In from crystals, the formation of the SA-center or the occupation of the Se site by Cl.