Modelling of semi-conductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: the current-voltage characteristics

[1]  I. Pintilie,et al.  Close to midgap trapping level in 60Co gamma irradiated silicon detectors , 2002 .

[2]  P. Ciampolini,et al.  Analysis of the transient response of LED-illuminated diodes under heavy radiation damage , 2000 .

[3]  B. Jones,et al.  Radiation damaged silicon as a semi-insulating relaxation semiconductor: static electrical properties , 1999 .

[4]  B. Jones,et al.  Semi-insulating GaAs as a relaxation semiconductor , 1998 .

[5]  B. Jones,et al.  Negative capacitance effects in semiconductor diodes , 1998 .

[6]  B. Jones,et al.  Ohmic I V characteristics in semi-insulating semiconductor diodes , 1998 .

[7]  B. Jones,et al.  Suppression of irradiation effects in gold-doped silicon detectors , 1997 .

[8]  B. Jones,et al.  Effects of radiation damage in silicon p - i - n photodiodes , 1997 .

[9]  B. Jones,et al.  SEMICONDUCTOR DETECTORS FOR USE IN HIGH RADIATION DAMAGE ENVIRONMENTS : SEMI-INSULATING GAAS OR SILICON? , 1997 .

[10]  S. J. Watts,et al.  The effect of radiation induced defects on the performance of high resistivity silicon diodes , 1996 .

[11]  N. Haegel.  Relaxation semiconductors: In theory and in practice , 1991 .

[12]  L. Partain.  Space‐charge‐limited‐current diode model for CuxS/CdS solar cells and their degradation , 1988 .

[13]  Edgar J. Evans,et al.  Conduction and Electrical Switching in Amorphous Chalcogenide Semiconductor Films , 1969 .

[14]  M. Lampert.  Double injection in insulators , 1961, IRE Transactions on Electron Devices.