论文信息 - Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime - 字舞流文

Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime

T. Ohshima | Shin-ichiro Sato | R. Siegele | I. Capan | T. Brodar | Z. Pastuovic | Shin‐ichiro Sato | Ž. Pastuović