Electrical characterization of Ω-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with - and channel orientations

Abstract Nanowire-array metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated along and crystal directions on (001) un-/strained silicon-on-insulator substrates. Lateral strain relaxation through patterning was employed to transform biaxial tensile strain into uniaxial tensile strain along the nanowire. Devices feature ideal subthreshold swings and maximum on-current/off-current ratios of 10 11 for n and p -type transistors on both substrates. Electron and hole mobilities were extracted by split C–V method. For p -MOSFETs an increased mobility is observed for channel direction devices compared to devices. The n -MOSFETs showed a 45% increased electron mobility compared to devices. The comparison of strained and unstrained n -MOSFETs along and clearly demonstrates improved electron mobilities for strained channels of both channel orientations.

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