论文信息 - A 64-kbit Dynamic MOS RAM

A 64-kbit Dynamic MOS RAM

A 64-kbit, low power MOS RAM with single-poly cell has been developed by refined photolithographic technology, where minimum pattern dimension is 2 ¿m. The small cell area, 210 ¿m2, is realized by a novel sense circuit.

E. Arai | N. Ieda

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