Sulfur doping of diamond films: Spectroscopic, electronic, and gas-phase studies

Chemical vapor deposition (CVD) has been used to grow sulfur doped diamond films on undoped Si and single crystal HPHT diamond as substrates, using a 1% CH4/H2 gas mixture with various levels of H2S addition (100–5000 ppm), using both microwave (MW) plasma enhanced CVD and hot filament (HF) CVD. The two deposition techniques yield very different results. HFCVD produces diamond films containing only trace amounts of S (as analyzed by x-ray photoelectron spectroscopy), the film crystallinity is virtually unaffected by gas phase H2S concentration, and the films remain highly resistive. In contrast, MWCVD produces diamond films with S incorporated at levels of up to 0.2%, and the amount of S incorporation is directly proportional to the H2S concentration in the gas phase. Secondary electron microscopy observations show that the crystal quality of these films reduces with increasing S incorporation. Four point probe measurements gave the room temperature resistivities of these S-doped and MW grown films as ∼20...

[1]  D. Dandy.  Influence of the gas phase on doping in diamond chemical vapor deposition , 2001 .

[2]  Stephen A. Redman,et al.  Resonance enhanced multiphoton ionization probing of H atoms and CH 3 radicals in a hot filament chemical vapour deposition reactor , 2000 .

[3]  W. Hsu.  Gas‐phase kinetics during microwave plasma‐assisted diamond deposition: Is the hydrocarbon product distribution dictated by neutral‐neutral interactions? , 1992 .

[4]  B. Tillack.  Atomic control of doping during SiGe epitaxy , 1998 .

[5]  P. May,et al.  Molecular beam mass spectrometry studies of nitrogen additions to the gas phase during microwave-plasma-assisted chemical vapour deposition of diamond , 1999 .

[6]  P. May,et al.  Gas-phase concentration measurements and diamond film composition from chlorine assisted CVD , 1996 .

[7]  S. Prawer,et al.  Can n‐type doping of diamond be achieved by Li or Na ion implantation? , 1993 .

[8]  R. Kalish,et al.  Electrochemical behavior of boron-doped diamond electrodes , 1996 .

[9]  R. Kalish,et al.  Is sulfur a donor in diamond , 2000 .

[10]  J. Prins.  Ion-implanted structures and doped layers in diamond , 1992 .

[11]  Keith N. Rosser,et al.  Low temperature diamond growth using CO2/CH4 plasmas: Molecular beam mass spectrometry and computer simulation investigations , 2001 .

[12]  K. Hassouni,et al.  Gas temperature measurements by laser spectroscopic techniques and by optical emission spectroscopy , 1996 .

[13]  D. Goodwin,et al.  Growth on the reconstructed diamond (100) surface , 1993 .

[14]  J. Dismukes,et al.  Synthetic diamond: emerging CVD science and technology , 1994 .

[15]  A. A. Smolin,et al.  Photodetectors with CVD diamond films: Electrical and photoelectrical properties photoconductive and photodiode structures☆ , 1998 .

[16]  P. May,et al.  Impedance studies of boron-doped CVD diamond electrodes , 2000 .

[17]  P. May,et al.  Influence of phosphine on the diamond growth mechanism: a molecular beam mass spectrometric investigation , 1998 .

[18]  R. Farrer.  On the substitutional nitrogen donor in diamond , 1969 .

[19]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[20]  P. May,et al.  Use of different excitation wavelengths for the analysis of CVD diamond by laser Raman spectroscopy , 1998 .

[21]  N. Suetin,et al.  On the mechanism of CH3 radical formation in hot filament activated CH4/H2 and C2H2/H2 gas mixtures , 2001 .

[22]  R. Haubner,et al.  Influence of phosphorus addition on diamond CVD , 1995 .

[23]  Isao Sakaguchi,et al.  Sulfur-doped homoepitaxial (001) diamond with n-type semiconductive properties , 2000 .

[24]  Hajime Haneda,et al.  Sulfur: A donor dopant for n-type diamond semiconductors , 1999 .

[25]  N. Everitt,et al.  In-situ mass spectrometric study of the gas-phase species involved in CVD of diamond as a function of filament temperature , 1995 .

[26]  R. Kalish,et al.  The re-arrangement of broken bonds in damaged diamond: Graphitization versus annealing back to diamond , 1998 .

[27]  Yoichiro Sato,et al.  Homoepitaxial diamond growth with sulfur-doping by microwave plasma-assisted chemical vapor deposition , 2001 .

[28]  Farrington Daniels,et al.  Physical Chemistry, 2nd Ed. , 1961 .

[29]  Yoichiro Sato,et al.  Growth and characterization of phosphorus doped n-type diamond thin films , 1998 .

[30]  Koji Kajimura,et al.  n-Type Control by Sulfur Ion Implantation in Homoepitaxial Diamond Films Grown by Chemical Vapor Deposition , 1999 .

[31]  A. Kulkarni,et al.  Electrical characterization of CVD diamond thin films grown on silicon substrates , 1995 .

[32]  P. May.  Diamond thin films: a 21st-century material , 2000, Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences.

[33]  D. Brenner,et al.  Molecular Dynamics Simulations of Dimer Opening on a Diamond {001}(2x1) Surface , 1992, Science.