Microcracks observed in epitaxial thin films of YBa2 Cu3O7–δ and GdBa2Cu3O7–δ†

Microcracking of epitaxially c-oriented YBa2Cu3O7–δ and GdBa2Cu3O7–δ thin films is observed to preferentially occur on buffered, R-cut sapphire substrates of 3 in diameter in comparison to smaller substrates and other substrate materials such as MgO, SrTiO3, and LaAlO3. The area density and the crystallographic appearance of the crack pattern can vary considerably across a given surface, from sample to sample, and in dependence on the temperature treatment. These dependencies indicate the crack behaviour to be seriously affected by the microstructure. The latter is studied by optical, electron, and atomic force microscopy. Cross-sectioning TEM reveals cracks to locally separate the HTSC film from the buffer layer. Optical microscopy using transmitted polarized light is found to be a straightforward, sensitive survey method to observe the microcracking behaviour. Mikrorisse von epitaktisch c-orientierten YBa2Cu3O7–δ- und GdBa2Cu3O7–δ-Dunnschichten zeigen sich bevorzugt auf mit Pufferschicht versehenen, R-orientierten Saphirsubstraten von 3 in Durchmesser im Vergleich zu kleineren Substraten und anderem Substratmaterial wie MgO, SrTiO3 und LaAlO3. Die Flachendichte und das kristallographische Bild der Risse kann betrachtlich variieren, und zwar langs einer gegebenen Oberflache, von Probe zu Probe sowie in Abhangigkeit von der Temperaturbehandlung. Diese Abhangigkeiten deuten auf einen starken Einflus der Mikrostruktur. Letztere wird mittels optischer, Elektronen- und Rastersondenmikroskopie untersucht. Die TEM-Querschnittsabbildung zeigt Risse, welche die HTSL-Schicht lokal von der Pufferschicht trennen. Die Lichtmikroskopie im polarisierten Durchlicht erweist sich als eine rationelle, empfindliche Ubersichtsmethode zur Beobachtung des Risverhaltens.

[1]  E. V. Pechen,et al.  Epitaxial growth of YBa2Cu3O7-δ films on oxidized silicon with yttria- and zirconia-based buffer layers , 1993 .

[2]  C. Gerber,et al.  Surface outgrowths on sputtered YBa2Cu3O7−x films: A combined atomic force microscopy and transmission electron microscopy study , 1993 .

[3]  P. Leiderer,et al.  Nanosecond magneto‐optic study of a new instability in thin YBa2Cu3O7−x films , 1993 .

[4]  U. Helmersson,et al.  Structural characterization of yttria (Y2O3) inclusions in YBa2Cu3O7-x films : growth model and effect on critical current density , 1993 .

[5]  C. Gerber,et al.  Critical currents in Y1Ba2Cu3O7−δ thin films containing screw dislocations , 1993 .

[6]  U. Poppe,et al.  Aging of superconducting Y1Ba2Cu3O7−x structures on silicon , 1993 .

[7]  Welch,et al.  Variable nature of twin boundaries in YBa2Cu3O7- delta and its alloys. , 1991, Physical review. B, Condensed matter.

[8]  N. Newman,et al.  High critical current densities in epitaxial YBa2Cu3O7−δ thin films on silicon‐on‐sapphire , 1991 .

[9]  J. Bravman,et al.  Thickness dependence of the twin density in YBa2Cu3O7−δ thin films sputtered onto MgO substrates , 1991 .

[10]  C. B. Carter,et al.  The nucleation and heteroepitactic growth of YBa2Cu3O7 − δ thin films on MgO , 1991 .

[11]  D. Dimos,et al.  Superconducting transport properties of grain boundaries in YBa2Cu3O7 bicrystals. , 1990, Physical review. B, Condensed matter.

[12]  H. Börner,et al.  Large Area Pulsed Laser Deposition of YBCO Thin Films and Buffer Layers on 3-Inch Wafers , 1994 .

[13]  W. Zander,et al.  Epitaxy of YBa 2 Cu 3 O 7-x on Silicon on Sapphire: Possibilities and Limits , 1994 .

[14]  P. Leiderer,et al.  Magnetic-field-induced damage in a superconducting YBa2Cu3O7−x film , 1992 .