论文信息 - Deposition of Cubic-SiC Thin Films on Si (111) using the Molecular Ion Beam Technique

Deposition of Cubic-SiC Thin Films on Si (111) using the Molecular Ion Beam Technique

SiC thin films were formed on Si (111) at growth temperatures of 750–1000 °C using the molecular ion beam technique, with a precursor of methylsilicenium ions (SiCH 3 + ). The chemical bindings and surface structures of SiC thin films were analyzed by Raman spectroscopy and reflection high-energy electron diffraction. As a result, 3C-SiC (111) was grown on Si (111) substrates without carbonized treatments.

M. Kiuchi | S. Sugimoto | Matsumoto Takashi | K. Mimoto | S. Gotô

[1] Jens Hofmann,et al. Pseudomorphic growth of ultrathin cubic 3C–SiC films on Si(100) by temperature programmed organometallic chemical vapor deposition , 1999 .

[2] M. H. Lee,et al. Deposition of cubic SiC films on silicon using dimethylisopropylsilane , 1995 .

[3] B. Schröter,et al. Low‐temperature growth of SiC thin films on Si and 6H–SiC by solid‐source molecular beam epitaxy , 1995 .

[4] K. Tachibana,et al. Ion Impact Energy Distributions and Properties of Amorphous Hydrogenated Carbon Thin Films Deposited in a Self-Biased RF Discharge , 1994 .

[5] Yitzhak Apeloig,et al. The chemistry of organic silicon compounds , 1989 .

[6] R. Davis,et al. Epitaxial Growth and Characterization of β ‐ SiC Thin Films , 1985 .

[7] J. Rabalais. Low energy ion-surface interactions , 1994 .

[8] R. Zuhr,et al. Ion beam deposition of -SiC layers onto a-SiC substrates , 1989 .