Ferroelectric tunnel junctions: Beyond the barrier.

Employing a semiconducting electrode in a ferroelectric tunnel junction boosts the resistance switching effect.

[1]  Julie Grollier,et al.  Solid-state memories based on ferroelectric tunnel junctions. , 2012, Nature nanotechnology.

[2]  E. Tsymbal,et al.  Ferroelectric tunnel memristor. , 2012, Nano letters.

[3]  D. Tenne,et al.  Probing Nanoscale Ferroelectricity by Ultraviolet Raman Spectroscopy , 2006, Science.

[4]  Jean-Marc Triscone,et al.  Physics of ferroelectrics : a modern perspective , 2007 .

[5]  Ho Won Jang,et al.  Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale. , 2009, Nano letters.

[6]  Germany,et al.  Theoretical current-voltage characteristics of ferroelectric tunnel junctions , 2005, cond-mat/0503546.

[7]  Vincent Garcia,et al.  Ferroelectric and multiferroic tunnel junctions , 2012 .

[8]  J. Grollier,et al.  A ferroelectric memristor. , 2012, Nature materials.

[9]  Philippe Ghosez,et al.  Ferroelectricity and tetragonality in ultrathin PbTiO3 films. , 2004, Physical review letters.

[10]  M. Alexe,et al.  Reversible electrical switching of spin polarization in multiferroic tunnel junctions. , 2012, Nature materials.

[11]  Di Wu,et al.  Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions. , 2013, Nature materials.

[12]  V. Garcia,et al.  Giant tunnel electroresistance for non-destructive readout of ferroelectric states , 2009, Nature.

[13]  E. Tsymbal,et al.  Giant Electroresistance in Ferroelectric Tunnel Junctions , 2005, cond-mat/0502109.

[14]  Sergei V. Kalinin,et al.  Polarization Control of Electron Tunneling into Ferroelectric Surfaces , 2009, Science.

[15]  J. Scott,et al.  Applications of Modern Ferroelectrics , 2007, Science.