Dual Mode Ferroelectric Transistor based Non-Volatile Flip-Flops for Intermittently-Powered Systems

In this work, we propose dual mode ferroelectric transistors (D-FEFETs) that exhibit dynamic tuning of operation between volatile and non-volatile modes with the help of a control signal. We utilize the unique features of D-FEFET to design two variants of non-volatile flip-flops (NVFFs). In both designs, D-FEFETs are operated in the volatile mode for normal operations and in the non-volatile mode to backup the state of the flip-flop during a power outage. The first design comprises of a truly embedded non-volatile element (D-FEFET) which enables a fully automatic backup operation. In the second design, we introduce need-based backup, which lowers energy during normal operation at the cost of area with respect to the first design. Compared to a previously proposed FEFET based NVFF, the first design achieves 19% area reduction along with 96% lower backup energy and 9% lower restore energy, but at 14%-35% larger operation energy. The second design shows 11% lower area, 21% lower backup energy, 16% decrease in backup delay and similar operation energy but with a penalty of 17% and 19% in the restore energy and delay, respectively. System-level analysis of the proposed NVFFs in context of a state-of-the-art intermittently-powered system using real benchmarks yielded 5%-33% energy savings.

[1]  Arnab Raha,et al.  Powering the Internet of Things , 2014, 2014 IEEE/ACM International Symposium on Low Power Electronics and Design (ISLPED).

[2]  Narayanan Vijaykrishnan,et al.  Ferroelectric Transistor based Non-Volatile Flip-Flop , 2016, ISLPED.

[3]  Suman Datta,et al.  Device-Circuit Analysis of Ferroelectric FETs for Low-Power Logic , 2017, IEEE Transactions on Electron Devices.

[4]  P. Steinmann,et al.  Molecular dynamics study of ferroelectric domain nucleation and domain switching dynamics , 2017, Scientific Reports.

[5]  Yusuf Leblebici,et al.  Energy/Reliability Trade-Offs in Low-Voltage ReRAM-Based Non-Volatile Flip-Flop Design , 2014, IEEE Transactions on Circuits and Systems I: Regular Papers.

[6]  Arnab Raha,et al.  Designing Energy-Efficient Intermittently Powered Systems Using Spin-Hall-Effect-Based Nonvolatile SRAM , 2017, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

[7]  C. Hu,et al.  Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation , 2011, 2011 International Electron Devices Meeting.

[8]  Arnab Raha,et al.  QuickRecall , 2015, ACM J. Emerg. Technol. Comput. Syst..

[9]  Sandeen Krishna Thirumala,et al.  Gate Leakage in Non-Volatile Ferroelectric Transistors: Device-Circuit Implications , 2018, 2018 76th Device Research Conference (DRC).

[10]  Kyeong-Sik Min,et al.  Zero-Sleep-Leakage Flip-Flop Circuit With Conditional-Storing Memristor Retention Latch , 2012, IEEE Transactions on Nanotechnology.

[11]  Ryusuke Nebashi,et al.  Nonvolatile Magnetic Flip-Flop for Standby-Power-Free SoCs , 2008, IEEE Journal of Solid-State Circuits.

[12]  Meng-Fan Chang,et al.  Enabling Energy-Efficient Nonvolatile Computing With Negative Capacitance FET , 2017, IEEE Transactions on Electron Devices.

[13]  Meng-Fan Chang,et al.  Ambient energy harvesting nonvolatile processors: From circuit to system , 2015, 2015 52nd ACM/EDAC/IEEE Design Automation Conference (DAC).

[14]  Kobayashi Masaharu Experimental Study on Polarization-Limited Operation Speed of Negative Capacitance FET with Ferroelectric HfO2 , 2017 .

[15]  Shintaro Izumi,et al.  A 2.4 pJ ferroelectric-based non-volatile flip-flop with 10-year data retention capability , 2014, 2014 IEEE Asian Solid-State Circuits Conference (A-SSCC).

[16]  Kyungmin Jang,et al.  Experimental study on polarization-limited operation speed of negative capacitance FET with ferroelectric HfO2 , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

[17]  T. Boscke,et al.  Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors , 2011, 2011 International Electron Devices Meeting.

[18]  Xueqing Li,et al.  Symmetric 2-D-Memory Access to Multidimensional Data , 2018, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

[19]  S. Datta,et al.  Physics-Based Circuit-Compatible SPICE Model for Ferroelectric Transistors , 2016, IEEE Electron Device Letters.

[20]  Kaushik Roy,et al.  Analysis and design of ultra low power thermoelectric energy harvesting systems , 2010, 2010 ACM/IEEE International Symposium on Low-Power Electronics and Design (ISLPED).