Noise Analysis for a SiGe HBT by Hydrodynamic Device Simulation
暂无分享,去创建一个
[1] C. K. Maiti,et al. Applications of Silicon-Germanium Heterostructure Devices , 2001 .
[2] Bernd Meinerzhagen,et al. Consistent Hydrodynamic and Monte-Carlo Simulation of SiGe HBTs Based on Table Models the Relaxation Times , 1998, VLSI Design.
[3] Fabrizio Bonani,et al. Generation–recombination noise modelling in semiconductor devices through population or approximate equivalent current density fluctuations , 1999 .
[4] J.W. Slotboom,et al. Surface impact ionization in silicon devices , 1987, 1987 International Electron Devices Meeting.
[5] John D. Cressler,et al. Re-engineering silicon: Si-Ge heterojunction bipolar technology , 1995 .
[6] Young Kim,et al. Si/SiGe:C heterojunction bipolar transistors in an epi-free well, single-polysilicon technology , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
[7] C. Jungemann,et al. Hierarchical 2D RF noise simulation of Si and SiGe devices by Langevin-type DD and, HD models based on MC generated noise parameters , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
[8] Christoph Jungemann,et al. Full-band Monte Carlo device simulation of a Si/SiGe-HBT with a realistic Ge profile , 1999, 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387).
[9] J. Slotboom,et al. Unified apparent bandgap narrowing in n- and p-type silicon , 1992 .
[10] J.W. Slotboom,et al. On the Optimisation of SiGe-Base Bipolar Transistors , 1995, ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference.
[11] W. Maes,et al. Impact ionization in silicon: A review and update , 1990 .
[12] Bernd Heinemann,et al. High-frequency noise analysis of Si/SiGe heterojunction bipolar transistors , 1996 .
[13] R. L. Johnston,et al. Measured dependence of lifetime upon local defect density and temperature in depletion layers of epitaxial silicon diodes , 1967 .
[14] Andreas Schüppen. SiGe-HBTs for mobile communication , 1999 .
[15] Friedrich Schäffler,et al. High-mobility Si and Ge structures , 1997 .
[16] C. Jungemann,et al. Efficient Full-Band Monte Carlo Simulation of Silicon Devices , 1999 .
[17] Alvin J. Joseph,et al. Noise modeling and SiGe profile design tradeoffs for RF applications [HBTs] , 2000 .
[18] Comparative study of electron transit times evaluated by DD, HD, and MC device simulation for a SiGe HBT , 2001 .
[19] B. Meinerzhagen,et al. Evaluation of impact ionization modeling in the framework of hydrodynamic equations , 1991, International Electron Devices Meeting 1991 [Technical Digest].
[20] G. Haddad,et al. Simulation of GaAs IMPATT diodes including energy and velocity transport equations , 1983, IEEE Transactions on Electron Devices.