Effects of Sub-gap Absorption on Photovoltaic Performance

The theoretical maximum photovoltaic efficiency is bounded by the Shockley-Queisser model which assumes that the photovoltaic material has step-function like absorptance, with zero absorption below its bandgap and perfect absorption above. However, typical photovoltaic materials exhibit absorption with an exponential dependence below its bandgap, known as the“Urbach tail” whose steepness is dependent on the Urbach parameter. Using a modified detailed balance model that accounts for sub-gap absorption we show that photovoltaic performance is strongly affected by the magnitude of the Urbach parameter.

[1]  Martin A. Green,et al.  Beyond 11% Efficient Sulfide Kesterite Cu2ZnxCd1–xSnS4 Solar Cell: Effects of Cadmium Alloying , 2017 .

[2]  Tonio Buonassisi,et al.  Improved Cu2O‐Based Solar Cells Using Atomic Layer Deposition to Control the Cu Oxidation State at the p‐n Junction , 2014 .

[3]  Christophe Ballif,et al.  Organometallic Halide Perovskites: Sharp Optical Absorption Edge and Its Relation to Photovoltaic Performance. , 2014, The journal of physical chemistry letters.

[4]  S. Kurtz,et al.  Strong Internal and External Luminescence as Solar Cells Approach the Shockley–Queisser Limit , 2011, IEEE Journal of Photovoltaics.

[5]  Martin A. Green,et al.  Self-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients , 2008 .

[6]  A. Rockett,et al.  Effect of Ga content on defect states in CuIn 1¿x Ga x Se 2 photovoltaic devices , 2002 .

[7]  Shane Johnson,et al.  Optical absorption edge of semi-insulating GaAs and InP at high temperatures , 1997 .

[8]  Antonio Martí,et al.  Absolute limiting efficiencies for photovoltaic energy conversion , 1994 .

[9]  John,et al.  Temperature dependence of the Urbach optical absorption edge: A theory of multiple phonon absorption and emission sidebands. , 1989, Physical review. B, Condensed matter.

[10]  C. R. Crowell,et al.  Dielectric constant and its temperature dependence for GaAs, CdTe, and ZnSe , 1976 .

[11]  M. Kurik Urbach Rule , 1971, November 16.

[12]  H. Queisser,et al.  Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells , 1961 .

[13]  R. Schropp,et al.  Beneficial effect of a low deposition temperature of hot-wire deposited intrinsic amorphous silicon for solar cells , 2003 .