Metal-Insulator-Semiconductor Photodetectors

The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III–V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

[1]  H. Morkoç,et al.  Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies , 1994 .

[2]  Hongen Shen,et al.  Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films , 2001 .

[3]  Y. Su,et al.  GaN MSM UV photodetectors with titanium tungsten transparent electrodes , 2006, IEEE Transactions on Electron Devices.

[4]  C. H. Liu,et al.  The characteristics of photo-CVD SiO2 and its application on SiC MIS UV photodetectors , 2003 .

[5]  M. Lee,et al.  A novel photodetector using MOS tunneling structures , 2000, IEEE Electron Device Letters.

[6]  R. Hendriks,et al.  Low-leakage-current metal–insulator–semiconductor–insulator–metal photodetector on silicon with a SiO2 barrier-enhancement layer , 1999 .

[7]  Chih-Wen Liu,et al.  The intermixing and strain effects on electroluminescence of SiGe dots , 2007 .

[8]  G. Amin,et al.  Photoconductive UV detectors on sol–gel-synthesized ZnO films , 2003 .

[9]  A. Rogalski.  Infrared detectors: status and trends , 2003 .

[10]  Cheewee Liu,et al.  A PMOS tunneling photodetector , 2001 .

[11]  The properties of photo chemical-vapor deposition SiO2 and its application in GaN metal-insulator semiconductor ultraviolet photodetectors , 2003 .

[12]  Guo-Qiang Lo,et al.  Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanism , 2008 .

[13]  C. Peng,et al.  SiGe/Si Quantum-Dot Infrared Photodetectors With ${\bm \delta}$ Doping , 2008, IEEE Transactions on Nanotechnology.

[14]  M. Liang,et al.  Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors , 2008 .

[15]  D. Choi,et al.  Ammonium sulfide treatment of HgCdTe substrate and its effects on electrical properties of ZnS/HgCdTe heterostructure , 2005 .

[16]  Pierre Gibart,et al.  III nitrides and UV detection , 2001 .

[17]  M. Kuijk,et al.  Ohmic contact formation on n-type Ge , 2008 .

[18]  Deep depletion phenomenon of SrTiO3 gate dielectric capacitor , 2004 .

[19]  Kang L. Wang,et al.  Tunable normal incidence Ge quantum dot midinfrared detectors , 2004 .

[20]  Manijeh Razeghi,et al.  Solar-blind AlGaN photodiodes with very low cutoff wavelength , 2000 .

[21]  J. Hwu,et al.  Metal-oxide-semiconductor tunneling photodiodes with enhanced deep depletion at edge by high-k material , 2010 .

[22]  Holly A. Marsh,et al.  Back-illuminated GaN/AlGaN heterojunction photodiodes with high quantum efficiency and low noise , 1998 .

[23]  Chih-Wen Liu,et al.  Broadband SiGe∕Si quantum dot infrared photodetectors , 2007 .

[24]  R. K. Crouch,et al.  Si and GaAs photocapacitive MIS infrared detectors , 1980 .

[25]  Kazumi Wada,et al.  High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform , 2005 .

[26]  Jiafa Cai,et al.  High-performance 4H-SiC-based ultraviolet p-i-n photodetector , 2007 .

[27]  J. Y. Zhang,et al.  MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range , 2008 .

[28]  Manijeh Razeghi,et al.  VISIBLE BLIND GAN P-I-N PHOTODIODES , 1998 .

[29]  T. Chen,et al.  A high efficient 820 nm MOS Ge quantum dot photodetector , 2003, IEEE Electron Device Letters.

[30]  K. Chhabra,et al.  Surface passivation of mercury-cadmium-telluride infrared detectors , 1991 .

[31]  M. Razeghia,et al.  Semiconductor ultraviolet detectors , 1996 .

[32]  Chia-Chun Yu,et al.  Low-temperature fabrication and characterization of Ge-on-insulator structures , 2006 .

[33]  Chih-Wen Liu,et al.  Narrow-band metal-oxide-semiconductor photodetector , 2009 .

[34]  P. Chen,et al.  Novel MIS Ge-Si quantum-dot infrared photodetectors , 2004, IEEE Electron Device Letters.

[35]  Kang L. Wang,et al.  INTERSUBBAND ABSORPTION IN BORON-DOPED MULTIPLE GE QUANTUM DOTS , 1999 .

[36]  Daniel Durini,et al.  Theoretical modeling and experimental investigation of MIS radiation sensor with giant internal signal amplification , 2004 .

[37]  C. K. Wang,et al.  Homoepitaxial ZnSe MIS photodetectors with SiO2 and BST insulator layers , 2006 .

[38]  R. Dupuis,et al.  Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates , 2009 .

[39]  J. Elazar,et al.  Photo-electric characteristics of HgCdTe tunnel MIS photo-detectors , 2009 .

[40]  T. S. Lee,et al.  Surface passivation of HgCdTe by CdZnTe and its characteristics , 1997 .

[41]  H. Ohno,et al.  Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO , 2004 .

[42]  High-performance solar-blind photodetectors based on Al/sub x/Ga/sub 1-x/N heterostructures , 2004, IEEE Journal of Selected Topics in Quantum Electronics.

[43]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[44]  S. Chang,et al.  High UV/visible rejection contrast AlGaN/GaN MIS photodetectors , 2006 .

[45]  P. Chen,et al.  High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity , 2002, Digest. International Electron Devices Meeting,.

[46]  Chih-Wen Liu,et al.  Flexible Ge-on-polyimide detectors , 2009 .

[47]  Cheewee Liu,et al.  A comprehensive study of inversion current in MOS tunneling diodes , 2001 .

[48]  Ge-on-glass detectors , 2007 .

[49]  A. Malik,et al.  Conception of the optical sensors based on transient processes in MIS structures , 2004 .

[50]  Tomonori Nishimura,et al.  Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface , 2007 .

[51]  D. D. Cannon,et al.  Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications , 2005 .

[52]  D. Shen,et al.  Metal−Oxide−Semiconductor-Structured MgZnO Ultraviolet Photodetector with High Internal Gain , 2010 .

[53]  T. Hansen,et al.  Silicon UV-Photodiodes Using Natural Inversion Layers , 1978 .

[54]  Kang L. Wang,et al.  Si1−xGex/Si multiple quantum well infrared detector , 1991 .

[55]  Antoni Rogalski,et al.  Quantum well photoconductors in infrared detector technology , 2003 .

[56]  M. Oehme,et al.  High speed germanium detectors on Si , 2008 .

[57]  C. Peng,et al.  Transport Mechanism of SiGe Dot MOS Tunneling Diodes , 2007, IEEE Electron Device Letters.

[58]  Cheewee Liu,et al.  Metal-oxide-semiconductor SiGe/Si quantum dot infrared photodetectors with delta doping in different positions , 2010 .

[59]  E. Monroy,et al.  Wide-bandgap semiconductor ultraviolet photodetectors , 2003 .

[60]  C. Hu,et al.  Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling , 2001 .

[61]  Yan-Kuin Su,et al.  AlInGaN Metal-Insulator-Semiconductor Photodetectors at UV-C 280 nm , 2009 .

[62]  G. Assanto,et al.  Near-Infrared p-i-n Ge-on-Si Photodiodes for Silicon Integrated Receivers , 2008, Journal of Lightwave Technology.

[63]  Thomas Fromherz,et al.  Medium-wavelength, normal-incidence, p-type Si/SiGe quantum well infrared photodetector with background limited performance up to 85 K , 1996 .

[64]  Low-noise metal-insulator-semiconductor UV photodiodes based on GaN , 2000 .

[66]  Antoni Rogalski,et al.  HgCdTe infrared detector material: history, status and outlook , 2005 .

[67]  Shao-You Deng,et al.  Front-illuminated long wavelength multiple quantum-well infrared photodetectors with backside gratings , 1995 .

[68]  T. Gustafson,et al.  Metal/tunnel‐barrier/semiconductor/tunnel‐barrier/metal fast photodetector , 1982 .

[69]  Y. Chetrit,et al.  Performance of Ge-on-Si p-i-n Photodetectors for Standard Receiver Modules , 2006, IEEE Photonics Technology Letters.

[70]  Cheewee Liu,et al.  δ-Doped MOS Ge/Si quantum dot/well infrared photodetector , 2006 .

[71]  Y. Taur,et al.  Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's , 1997, IEEE Electron Device Letters.

[72]  Sheng-Joue Young,et al.  ZnO-based MIS photodetectors , 2007, Sensors and actuators. A, Physical.

[73]  W. Miller,et al.  Ge photocapacitive MIS infrared detectors , 1979 .

[74]  Manuela Vieira,et al.  ITO/SiOx/Si optical sensor with internal gain , 2001 .

[75]  E. Monroy,et al.  Application and Performance of GaN Based UV Detectors , 2001 .

[76]  Joe C. Campbell,et al.  Very low dark current metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers , 1997 .

[77]  J. N. Haralson,et al.  Review of reliability issues of metal-semiconductor-metal and avalanche photodiode photonic detectors , 1999 .

[78]  M. Caymax,et al.  Ge and III/V as Enabling Materials for Future CMOS Technologies , 2006 .

[79]  Michel Gendry,et al.  Polarized front-illumination response in intraband quantum dot infrared photodetectors at 77 K , 2001 .