Silicon Power Field Controlled Devices and Integrated Circuits

[1]  P. Leturcq,et al.  High-level behavior of power rectifiers: A quantitative analysis of the forward voltage drop , 1978, IEEE Transactions on Electron Devices.

[2]  Martin E. Zahn Calculation of the turn-on behavior of most , 1974 .

[3]  W. Read,et al.  Statistics of the Recombinations of Holes and Electrons , 1952 .

[4]  J. Hauser,et al.  Characteristics of junction field effect devices with small channel length-to-width ratios , 1967 .

[5]  K. Lisiak,et al.  Platinum as a lifetime‐control deep impurity in silicon , 1975 .

[6]  B. Jayant Baliga Bipolar operation of power junction field effect transistors , 1980 .

[7]  W. Brattain,et al.  Physical Theory of Semiconductor Surfaces , 1955 .

[8]  J. Berger,et al.  A high voltage MOS switch , 1975, IEEE Journal of Solid-State Circuits.

[9]  Measurement of carrier lifetime profiles in diffused layers of semiconductors , 1978, IEEE Transactions on Electron Devices.

[10]  A. S. Grove,et al.  Effect of surface fields on the breakdown voltage of planar silicon p-n junctions , 1967 .

[11]  G. L. Pearson,et al.  Modulation of Conductance of Thin Films of Semi-Conductors by Surface Charges , 1948 .

[12]  Jun-ichi Nishizawa,et al.  High-frequency high-power static induction transistor , 1978 .

[13]  E. L. Long,et al.  A high-gain 15-W monolithic power amplifier with internal fault protection , 1970 .

[14]  E. Arnold,et al.  CRYSTALLOGRAPHIC SYMMETRY OF SURFACE STATE DENSITY IN THERMALLY OXIDIZED SILICON , 1968 .

[15]  E. Kane,et al.  Energy band structure in p-type germanium and silicon , 1956 .

[16]  M. Tanenbaum,et al.  Preparation of Uniform Resistivity n‐Type Silicon by Nuclear Transmutation , 1961 .

[17]  F. J. Morin,et al.  Electrical Properties of Silicon Containing Arsenic and Boron , 1954 .

[18]  W. Fulop,et al.  Calculation of avalanche breakdown voltages of silicon p-n junctions , 1967 .

[19]  B.J. Baliga,et al.  Comparison of gold, platinum, and electron irradiation for controlling lifetime in power rectifiers , 1977, IEEE Transactions on Electron Devices.

[20]  D. P. Lecrosnier,et al.  Ion-implanted FET for power applications , 1974 .

[21]  V. Temple,et al.  Enhancement of breakdown voltage using floating metal field plates , 1976 .

[22]  O. Ozawa,et al.  A vertical channel JFET fabricated using silicon planar technology , 1976, IEEE Journal of Solid-State Circuits.

[23]  J. Slotboom,et al.  The pn-product in silicon , 1977 .

[24]  Raya Mertens,et al.  Transport equations in heavy doped silicon , 1973 .

[25]  V. Temple,et al.  The theory and application of a simple etch contour for near ideal breakdown voltage in plane and planar p-n junctions , 1976, IEEE Transactions on Electron Devices.

[26]  H.M. Janus,et al.  Application of thermal neutron irradiation for large scale production of homogeneous phosphorus doping of floatzone silicon , 1976, IEEE Transactions on Electron Devices.

[27]  W. Fahrner,et al.  Passivation of High Breakdown Voltage p‐n‐p Structures by Thermal Oxidation , 1976 .

[28]  G. Macfarlane,et al.  FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI , 1957 .

[29]  Hisashi Hara,et al.  Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon Surfaces , 1971 .

[30]  P. U. Calzolari,et al.  A theoretical investigation on the generation current in silicon p-n junctions under reverse bias , 1972 .

[31]  C. K. Osburn,et al.  Dielectric Breakdown Properties of SiO2 Films Grown in Halogen and Hydrogen‐Containing Environments , 1974 .

[32]  M. S. Mock,et al.  Transport equations in heavily doped silicon, and the current gain of a bipolar transistor , 1973 .

[33]  James D. Plummer,et al.  A monolithic 200-V CMOS analog switch , 1976 .

[34]  B. J. Baliga,et al.  The Dominant Recombination Centers in Electron‐Irradiated Semiconductors Devices , 1977 .

[35]  J. M. Fairfield,et al.  Gold as a recombination centre in silicon , 1965 .

[36]  P. V. Gray,et al.  DENSITY OF SiO2–Si INTERFACE STATES , 1966 .

[37]  Wolfgang M. Werner,et al.  The work function difference of the MOS-system with aluminium field plates and polycrystalline silicon field plates , 1974 .

[38]  G. Neumark New Model for Interface Charge-Carrier Mobility: The Role of Misfit Dislocations , 1968 .

[39]  C. Sah,et al.  Source to drain resistance beyond pinch-off in metal-oxide-semiconductor transistors (MOST) , 1965 .

[40]  S. Sze,et al.  AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p‐n JUNCTIONS IN Ge, Si, GaAs, AND GaP , 1966 .

[41]  Potential, field and carrier distribution in the channel of junction field-effect transistors , 1970 .

[42]  Y. C. Cheng,et al.  The Effect of HCl and Cl2 on the Thermal Oxidation of Silicon , 1972 .

[43]  J. Grosvalet,et al.  Physical phenomenon responsible for saturation current in field effect devices , 1963 .

[44]  B. J. Baliga,et al.  Vertical channel field-controlled thyristors with high gain and fast switching speeds , 1978, IEEE Transactions on Electron Devices.

[45]  M. Declercq,et al.  Avalanche breakdown in high-voltage D-MOS devices , 1976, IEEE Transactions on Electron Devices.

[46]  C. Jacoboni,et al.  Electron drift velocity in silicon , 1975 .

[47]  R. Hall Electron-Hole Recombination in Germanium , 1952 .

[48]  Sorab K. Ghandhi,et al.  General theory for pinched operation of the junction-gate FET , 1969 .

[49]  I. M. Ross,et al.  Unipolar "Field-Effect" Transistor , 1953, Proceedings of the IRE.

[50]  Thermomigration processing of isolation grids in power structures , 1976, IEEE Transactions on Electron Devices.

[51]  C. Sah,et al.  The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistors , 1966 .

[52]  B. Baliga Morphology of silicon epitaxial layers grown by undercooling of a saturated tin melt , 1977 .

[53]  R. A. Kokosa,et al.  Avalanche breakdown of diffused silicon p-n junctions , 1966 .

[54]  E. Yang Current Saturation Mechanisms in Junction Field-Effect Transistors* , 1972 .

[55]  A. G. Chynoweth,et al.  Ionization Rates for Electrons and Holes in Silicon , 1958 .

[56]  W. Ko,et al.  Sodium distribution in thermal oxide on silicon by radiochemical and MOS analysis , 1966 .

[57]  Hee-Gook Lee,et al.  Modelling and measurement of surface impurity profiles of laterally diffused regions , 1978 .

[58]  M. Schnöller,et al.  Silicon doping by nuclear transmutation , 1976 .

[59]  M.S. Adler,et al.  Calculation of the diffusion curvature related avalanche breakdown in high-voltage planar p-n junctions , 1975, IEEE Transactions on Electron Devices.

[60]  C.F. Wheatley,et al.  On the proportioning of chip area for multistage Darlington power transistors , 1976, IEEE Transactions on Electron Devices.

[61]  R. N. Hall,et al.  Power Rectifiers and Transistors , 1952, Proceedings of the IRE.

[62]  J. D. Harnden Power semiconductors: Looking ahead: Consumer applications will grow for moderate-current devices while large-diameter wafers await packaging innovations , 1977, IEEE Spectrum.

[63]  Frank Stern,et al.  Quantum properties of surface space-charge layers , 1973 .

[64]  I. Yoshida,et al.  A high power MOSFET with a vertical drain electrode and a meshed gate structure , 1976, IEEE Journal of Solid-State Circuits.

[65]  C. Sah,et al.  Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics , 1957, Proceedings of the IRE.

[66]  A. H. Marshak,et al.  Carrier densities and emitter efficiency in degenerate materials with position-dependent band structure , 1978 .

[67]  K. Ravi The Heterogeneous Precipitation of Silicon Oxides in Silicon , 1974 .

[68]  P. Ostoja,et al.  Relationship between resistivity and phosphorus concentration in silicon , 1974 .

[69]  G. D. Vendelin,et al.  D-MOS transistor for microwave applications , 1972 .

[70]  B. Baliga Buried‐grid fabrication by silicon liquid‐phase epitaxy , 1979 .

[71]  R. R. O'Brien,et al.  Computer aided two-dimensional analysis of the junction field-effect transistor , 1970 .

[72]  J. Burtscher,et al.  Die rekombination in thyristoren und gleichrichtern aus silizium: Ihr einfluss auf die durchlasskennlinie und das freiwerdezeitverhalten , 1975 .

[73]  C.A.T. Salama,et al.  Depletion V-groove MOS (VMOS) power transistors , 1976 .

[74]  G. Baccarani,et al.  Electron mobility empirically related to the phosphorus concentration in silicon , 1975 .

[75]  W. Shockley,et al.  A Unipolar "Field-Effect" Transistor , 1952, Proceedings of the IRE.

[76]  J. Cornu,et al.  Field distribution near the surface of beveled P-N junctions in high-voltage devices , 1973 .

[77]  B. Jayant Baliga,et al.  Optimization of recombination levels and their capture cross section in power rectifiers and thyristors , 1977 .

[78]  H. C. de Graaff,et al.  Measurements of bandgap narrowing in Si bipolar transistors , 1976 .

[79]  R. Carlson,et al.  Lifetime control in silicon power devices by electron or gamma irradiation , 1977, IEEE Transactions on Electron Devices.

[80]  C. Canali,et al.  Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature , 1975, IEEE Transactions on Electron Devices.

[81]  J. Irvin,et al.  Resistivity of bulk silicon and of diffused layers in silicon , 1962 .

[82]  J. Hauser,et al.  Small signal properties of field effect devices , 1965 .

[83]  Y. Okamoto,et al.  Drift-Velocity Saturation of Holes in Si Inversion Layers , 1971 .

[84]  A. M. Mazzone,et al.  The diffuse scattering model of effective mobility in the strongly inverted layer of MOS transistors , 1974 .

[85]  S. C. Choo,et al.  Effect of carrier lifetime on the forward characteristics of high-power devices , 1970 .

[86]  A. Bilotti Static temperature distribution in IC chips with isothermal heat sources , 1974 .

[87]  D. Estève,et al.  ENTIRELY DIFFUSED VERTICAL CHANNEL JFET: THEORY AND EXPERIMENT , 1978 .

[88]  M.S. Adler,et al.  Theory and breakdown voltage for planar devices with a single field limiting ring , 1977, IEEE Transactions on Electron Devices.

[89]  H. Kodera,et al.  Optimum design of triode-like JFET's by two-dimensional computer simulation , 1977, IEEE Transactions on Electron Devices.

[90]  R. E. Thomas,et al.  Carrier mobilities in silicon empirically related to doping and field , 1967 .

[91]  E. Sirtl,et al.  Modern silicon technology , 1975 .

[92]  S. Schweitzer,et al.  Double positive beveling: A better edge contour for high-voltage devices , 1974 .

[93]  Edward S. Yang,et al.  An analysis of current saturation mechanism of junction field-effect transistors , 1970 .

[94]  A vertical FET with self-aligned ion-implanted source and gate regions , 1978, IEEE Transactions on Electron Devices.

[95]  B.J. Baliga The asymmetrical field-controlled thyristor , 1980, IEEE Transactions on Electron Devices.

[96]  B. Baliga Dopant Distribution in Silicon Liquid Phase Epitaxial Layers: Meltback Effects , 1979 .

[97]  S. D. Brotherton,et al.  An investigation of the influence of low-temperature annealing treatments on the interface state density at the Si-SiO2 , 1975 .

[98]  R. Finke,et al.  A field terminated diode , 1976, IEEE Transactions on Electron Devices.

[99]  N. Tsubouchi,et al.  Second breakdown in MOS transistors , 1966 .

[100]  Paolo Spirito,et al.  New semiconductor active device: the conductivity-controlled transistor , 1979 .

[101]  W. Shockley,et al.  The path to the conception of the junction transistor , 1976, IEEE Transactions on Electron Devices.

[102]  A. S. Grove,et al.  Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of Silicon , 1964 .

[103]  The characteristics and applications of a V-shaped notched-channel field-effect transistor (VFET) , 1976 .

[104]  C. Jacoboni,et al.  A review of some charge transport properties of silicon , 1977 .

[105]  Chih-Tang Sah,et al.  Correlation of experiments with a two-section-model theory of the saturation drain conductance of MOS transistors , 1968 .

[106]  F. Berz,et al.  Carrier mobility in silicon MOST's , 1969 .

[107]  G. A. May,et al.  High-voltage simultaneous diffusion silicon-gate CMOS , 1974 .

[108]  K. Lisiak,et al.  Optimization of nonplanar power MOS transistors , 1978, IEEE Transactions on Electron Devices.

[109]  A. Haug Carrier density dependence of Auger recombination , 1978 .

[110]  J. Hensel,et al.  Cyclotron Resonance in Uniaxially Stressed Silicon. II. Nature of the Covalent Bond , 1965 .

[111]  M.S. Adler,et al.  The planar junction etch for high voltage and low surface fields in planar devices , 1977, IEEE Transactions on Electron Devices.

[112]  Adolf Herlet The maximum blocking capability of silicon thyristors , 1965 .

[113]  B. Jayant Baliga,et al.  Analytical solutions for the breakdown voltage of abrupt cylindrical and spherical junctions , 1976 .

[114]  Bruno Murari Power Integrated Circuits: Problems, Trade Offs and Solutions , 1977, ESSCIRC '77: 3rd European Solid State Circuits Conference.

[115]  M. Splinter,et al.  High voltage SOS/MOS devices and circuit elements, , 1976, 1976 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

[116]  D. A. Kleinman,et al.  The forward characteristic of the pin diode , 1956 .

[117]  B. Jayant Baliga Deep Planar Gallium and Aluminum Diffusion in Silicon , 1979 .

[118]  G. A. Baraff,et al.  Distribution Functions and Ionization Rates for Hot Electrons in Semiconductors , 1962 .

[119]  J. Nishizawa,et al.  Field-effect transistor versus analog transistor (static induction transistor) , 1975, IEEE Transactions on Electron Devices.

[120]  L. Huldt Band-to-Band Auger Recombination in Indirect Gap Semiconductors , 1971, November 16.

[121]  V. Y. Doo Silicon nitride, a new diffusion mask , 1966 .

[122]  A. Herlet The forward characteristic of silicon power rectifiers at high current densities , 1968 .

[123]  S. M. Sze,et al.  Metal-Insulator-Semiconductor (MIS) Physics , 1969 .

[124]  P. Laurenceau,et al.  Power bipolar gridistor , 1976 .

[125]  Donald Christiansen Spectral lines: Hardware, software, and mushware , 1975, IEEE Spectrum.

[126]  J. G. Oakes,et al.  A Power Silicon Microwave MOS Transistor , 1976 .

[127]  S. P. Sinitsa,et al.  Scattering Mechanisms in Inversion Channels of MIS Structures on Silicon , 1972, November 16.

[128]  B. J. Baliga,et al.  A power junction gate field-effect transistor structure with high blocking gain , 1980, IEEE Transactions on Electron Devices.

[129]  E. D. Wolley,et al.  High-voltage planar p-n junctions , 1967 .

[130]  C.A.T. Salama A new short channel MOSFET structure (UMOST) , 1977 .

[131]  J. Dziewior,et al.  Auger coefficients for highly doped and highly excited silicon , 1977 .

[132]  Carver A. Mead,et al.  Barrier energies in metal-silicon dioxide-silicon structures , 1966 .

[133]  F. Fang,et al.  Hot Electron Effects and Saturation Velocities in Silicon Inversion Layers , 1970 .

[134]  B. Jayant Baliga,et al.  Grid depth dependence of the characteristics of vertical channel field controlled thyristors , 1979 .

[135]  B. J. Baliga,et al.  Enhancement- and depletion-mode vertical-channel m.o.s. gated thyristors , 1979 .

[136]  M.S. Adler,et al.  Maximum surface and bulk electric fields at breakdown for planar and beveled devices , 1978, IEEE Transactions on Electron Devices.

[137]  F. E. Gentry,et al.  Control of electric fields at the surface of p-n junctions , 1963 .

[138]  Bantval J. Baliga,et al.  A simple method for predicting the forward blocking gain of gridded field effect devices with rectangular grids , 1980 .

[139]  R. R. Verderber,et al.  SiO 2 /Si 3 N 4 passivation of high-power rectifiers , 1970 .

[140]  B. Baliga Kinetics of the Epitaxial Growth of Silicon from a Tin Melt , 1977 .

[141]  P. L. Hower Optimum design of power transistor switches , 1973 .

[142]  N. Nilsson,et al.  Measurement of Auger recombination in silicon by laser excitation , 1978 .

[143]  S. R. Hofstein Stabilization of MOS devices , 1967 .

[144]  James R. Chelikowsky,et al.  ELECTRONIC STRUCTURE OF SILICON , 1974 .

[145]  Bruce E. Deal,et al.  Dependence of Interface State Density on Silicon Thermal Oxidation Process Variables , 1979 .

[146]  M.S. Adler Factors determining forward voltage drop in the field-terminated diode (FTD) , 1978, IEEE Transactions on Electron Devices.