Imaging ellipsometry revisited: Developments for visualization of thin transparent layers on silicon substrates

Imaging ellipsometry is presented as a technique for quantification and visualization of the lateral thickness distribution of thin (0–30 nm) transparent layers on solid substrates. The main advantage of imaging ellipsometry is that every point on a surface is measured at the same time with a high lateral resolution. The method is based on the use of combined null and off‐null ellipsometry at an incident angle close to the pseudo‐Brewster angle of a high index substrate such as silicon. In the present experimental setup, a xenon lamp, a collimator, and a wavelength‐selective filter provide an expanded collimated probe beam with a diameter of 25 mm. Other major components in the system are a polarizer, a compensator, and an analyzer. In this way, a 15×30 mm2 image of a sample surface can be focused onto a charge‐coupled‐device video camera and transferred to a computer for further evaluation by image processing. Thickness measurements are performed for calibration purposes with ordinary null ellipsometry. ...