论文信息 - Comparison of the radiation behavior of 65 nm fully depleted Silicon-on-Insulator MOSFETs employing different tensile-strain-inducing techniques - 字舞流文

Comparison of the radiation behavior of 65 nm fully depleted Silicon-on-Insulator MOSFETs employing different tensile-strain-inducing techniques

Paul Leroux | Emmanuel Augendre | Eddy Simoen | M. Van Uffelen | Sofie Put | E. Simoen | C. Claeys | E. Augendre | P. Leroux | M. Uffelen | Corneel Claeys | S. Put