Observation of latch-up time evolution in CMOS IC's by means of SEM stroboscopic voltage contrast techniques

SEM stroboscopic voltage contrast techniques allow one to observe with high voltage resolution the temporal and spatial evolution of latch-up phenomena from the firing event to the final condition. In particular, the authors show by means of an example that in a CMOS IC the firing point may be different from the latch-up site in steady state. Only dynamic observations, therefore, allow a complete understanding of latch-up phenomena and an effective correction of IC layout.

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