A lifetime projection method using series model and acceleration factors for TDDB failures of thin gate oxides

The series model combined with the Weibull distribution is shown to be suitable for characterizing time-dependent dielectric breakdown (TDDB) failures and for projecting the failure rate under normal operating conditions. The validity of existing models for acceleration factors is examined through long-term lifetests with a wide range of stress fields for 11-nm oxides. The resulting curve is found to estimate field acceleration more accurately for lower field regions. The activation energy is also essentially independent of oxide field for thin and near-defect-free oxides.<<ETX>>

[1]  J. McPherson,et al.  Acceleration Factors for Thin Gate Oxide Stressing , 1985, 23rd International Reliability Physics Symposium.

[2]  Jack C. Lee,et al.  Modeling and characterization of gate oxide reliability , 1988 .

[3]  Ih-Chin Chen,et al.  Electrical breakdown in thin gate and tunneling oxides , 1985 .

[4]  D. F. Frost,et al.  A Method for Predicting VLSI-Device Reliability Using Series Models for Failure Mechanisms , 1987, IEEE Transactions on Reliability.

[5]  P. O'Connor,et al.  Practical Reliability Engineering , 1981 .

[6]  N. Kawamura,et al.  Reliability of 6-10 nm thermal SiO2films showing intrinsic dielectric integrity , 1985, IEEE Transactions on Electron Devices.

[7]  L. A. Dissado,et al.  Theoretical basis for the statistics of dielectric breakdown , 1983 .

[8]  Eduard A. Cartier,et al.  Degradation and breakdown of silicon dioxide films on silicon , 1992 .

[9]  C. Hu,et al.  Projecting gate oxide reliability and optimizing reliability screens , 1990 .

[10]  Fischetti.  Model for the generation of positive charge at the Si-SiO2 interface based on hot-hole injection from the anode. , 1985, Physical review. B, Condensed matter.

[11]  S. A. Grot,et al.  Temperature dependence of electron trapping in metal‐oxide‐semiconductor devices as a function of the injection mode , 1988 .

[12]  K. Taniguchi,et al.  Time-dependent-dielectric breakdown of thin thermally grown SiO2films , 1985, IEEE Transactions on Electron Devices.

[13]  E. Rosenbaum,et al.  High-frequency time-dependent breakdown of SiO/sub 2/ , 1991, IEEE Electron Device Letters.

[14]  Chenming Hu,et al.  Temperature acceleration of time-dependent dielectric breakdown , 1989 .

[15]  R. F. De Keersmaecker,et al.  The statistics of dielectric breakdown in MOS capacitors under static and dynamic voltage stress , 1987 .