3.3kV all-SiC module for power distribution apparatus

We developed 3.3kV All-SiC power module on which SiC-MOSFET and SiC-SBD were mounted for electric power distribution apparatus. This power module has characteristic structure of pin-connections and resin-molded. Total switching loss of the module is lower than the module which mounted Si-IGBT and Si-FWD more than 60 percent.

[1]  Y. Ikeda,et al.  Full SiC power module with advanced structure and its solar inverter application , 2013, 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[2]  Yoshikazu Takahashi,et al.  Investigation on wirebond-less power module structure with high-density packaging and high reliability , 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.