Nearly Planar Low Threshold Vertical-Cavity Surface-Emitting Lasers Using High Contrast Mirrors and Native Oxidation

Data will be presented characterizing a device structure for the vertical-cavity surface-emitting laser (VCSEL) which has achieved low threshold operation. An advantage of the laser structure is nearly planar processing. In initial results we have achieved a room-temperature continuous-wave threshold current of 225μA in an 8μm square device. To our knowledge, this is the lowest threshold current yet achieved in a vertical-cavity laser. Since the threshold current density is only 350A/cm2, this also represents to our knowledge the lowest threshold current density in a VCSEL of any diameter. The threshold voltage drive is 1.9V, with a drive voltage of 2.9V at four times threshold.