Wireless multi-standard terminals: system analysis and design of a reconfigurable RF front-end

The availability of multi-standard terminals will be key to provide location independent connections able to take advantage of any possible infrastructure. This paper addresses both the architecture and the circuits for the RF front-end of a terminal with cellular (GSM, EDGE and UMTS), LAN (IEEE802.11a/b/g) and Bluetooth radio interfaces. A multi-standard simulator has been developed to validate the architectural and design choices in terms of error rates at bit or packet level. The simulator takes into account implementation non-idealities and performs all tests to be passed to comply with the given standards. It also hints at the need for implementation margins as well as at possible optimization between different RF-blocks. The final solution, still under design, will consists of two chips, one including the TX and the other the RX for all the above standards. The cellular (plus Bluetooth) transmitter relies on a Linear amplification with Non-linear Component (LINC) architecture that uses direct modulation of the carrier. This allows power saving because DAC and up-conversion mixers are not required. The WLAN (plus Bluetooth) transmitter adopts a direct-conversion architecture that implements an internal output matching over all the frequency bands while maintaining good system efficiency. The same building blocks are used for all standards, saving power and chip area. The cellular receiver architecture is able to reconfigure between Low-IF for GSM and direct conversion for UMTS and Bluetooth. The key aspects in achieving the specs in a fully integrated fashion are a mixer with a very high dynamic range, a careful control of DC offsets and a highly tunable VCO. The WLAN receiver also uses direct-conversion with a Low Noise Amplifier based on a common gate topology that uses positive feedback through integrated transformers to improve input matching and noise. The frequency down-converter uses current driven passive mixers to achieve low 1/f noise corner, and high linearity with low power consumption. Finally, the base-band blocks can be shared among all the standard, thanks to their high reconfigurability. The paper describes the ideas behind the key RF blocks and some details of circuit implementation. Experimental measurements from sub-blocks in a 0.13 /spl mu/m CMOS technology are presented and discussed.

[1]  David R. Cox,et al.  Linear Amplification with Nonlinear Components , 1974, IEEE Trans. Commun..

[2]  Alan V. Oppenheim,et al.  Discrete-Time Signal Pro-cessing , 1989 .

[3]  R. Castello,et al.  A 700-kHz bandwidth /spl Sigma//spl Delta/ fractional synthesizer with spurs compensation and linearization techniques for WCDMA applications , 2004, IEEE Journal of Solid-State Circuits.

[4]  W. Redman-White,et al.  1/f noise in passive CMOS mixers for low and zero IF integrated receivers , 2001, Proceedings of the 27th European Solid-State Circuits Conference.

[5]  Robert H. Caverly,et al.  HF, VHF, and UHF systems and technology , 2002 .

[6]  R. Castello,et al.  A 72-mW CMOS 802.11a direct conversion front-end with 3.5-dB NF and 200-kHz 1/f noise corner , 2005, IEEE Journal of Solid-State Circuits.

[7]  P.R. Gray,et al.  A 1.9GHz 1W CMOS class E power amplifier for wireless communications , 1999, Proceedings of the 24th European Solid-State Circuits Conference.

[8]  Paul R. Gray,et al.  A 1.9-GHz, 1-W CMOS class-E power amplifier for wireless communications , 1999 .

[9]  H. Hashemi,et al.  Concurrent dual-band CMOS low noise amplifiers and receiver architectures , 2001, 2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185).

[10]  Y. Yamamoto,et al.  Multi-band RF SAW filter for mobile phone using surface mount plastic package , 2002, 2002 IEEE Ultrasonics Symposium, 2002. Proceedings..

[11]  F. Svelto,et al.  A CMOS direct down-converter with +78dBm minimum IIP2 for 3G cell-phones , 2005, ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..

[12]  R. Meyer,et al.  High-frequency nonlinearity analysis of common-emitter and differential-pair transconductance stages , 1998, IEEE J. Solid State Circuits.

[13]  F. Raab,et al.  Power amplifiers and transmitters for RF and microwave , 2002 .

[14]  C. Rapp,et al.  Effects of HPA-Nonlinearity on a 4-DPSK/OFDM-Signal for a Digital Sound Broadcasting System. , 1991 .

[15]  Antonio Liscidini,et al.  A 0.13 /spl mu/m CMOS front-end, for DCS1800/UMTS/802.11b-g with multiband positive feedback low-noise amplifier , 2006, IEEE Journal of Solid-State Circuits.

[16]  D.J. Allstot,et al.  A quad-band GSM-GPRS transmitter with digital auto-calibration , 2004, IEEE Journal of Solid-State Circuits.

[17]  R. Castello,et al.  A 0.13 /spl mu/m CMOS front-end for DCS1800/UMTS/802.11b-g with multi-band positive feedback low noise amplifier , 2005, Digest of Technical Papers. 2005 Symposium on VLSI Circuits, 2005..

[18]  F. Raab Class-F power amplifiers with maximally flat waveforms , 1997 .

[19]  No Sokal,et al.  CLASS-E - NEW CLASS OF HIGH-EFFICIENCY TUNED SINGLE-ENDED SWITCHING POWER AMPLIFIERS , 1975 .

[20]  Adel A. M. Saleh,et al.  Frequency-Independent and Frequency-Dependent Nonlinear Models of TWT Amplifiers , 1981, IEEE Trans. Commun..

[21]  E. Hegazi,et al.  A 17 mW transmitter and frequency synthesizer for 900 MHz GSM fully integrated in 0.35-/spl mu/m CMOS , 2002, 2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302).

[22]  J.C. Leete,et al.  A 2.4 GHz CMOS transceiver for Bluetooth , 2001, 2001 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC (Cat. No.01CH37177).

[23]  A. Gnudi,et al.  A 0.83-2.5-GHz continuously tunable quadrature VCO , 2005, IEEE Journal of Solid-State Circuits.

[24]  L. Perraud,et al.  Fully integrated 10 GHz CMOS VCO for multi-band WLAN applications , 2003, ESSCIRC 2004 - 29th European Solid-State Circuits Conference (IEEE Cat. No.03EX705).

[25]  Scott E. Meninger,et al.  A fractional- N frequency synthesizer architecture utilizing a mismatch compensated PFD/DAC structure for reduced quantization-induced phase noise , 2003 .

[26]  H. Chireix High Power Outphasing Modulation , 1935, Proceedings of the Institute of Radio Engineers.

[27]  Adiseno,et al.  A wide-band RF front-end for multiband multistandard high-linearity low-IF wireless receivers , 2002, IEEE J. Solid State Circuits.

[28]  A. Ghorbani,et al.  The effect of solid state power amplifiers (SSPAs) nonlinearities on MPSK and M-QAM signal transmission , 1991 .

[29]  F. Svelto,et al.  A 1.4 GHz-2 GHz wideband CMOS class-E power amplifier delivering 23 dBm peak with 67% PAE , 2005, 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers.