论文信息 - Use of in situ ellipsometry to observe phase transitions during boron nitride thin film deposition - 字舞流文

Use of in situ ellipsometry to observe phase transitions during boron nitride thin film deposition

David R. McKenzie | D. Mckenzie | R. Netterfield | W. McFall | R. P. Netterfield | W. D. McFall

[1] D. Mckenzie,et al. Compressive stress induced formation of cubic boron nitride , 1993 .

[2] R. Messier,et al. Phase control of cubic boron nitride thin films , 1992 .

[3] R. Boswell,et al. The application of the helicon source to plasma processing , 1991 .

[4] G. Koren. Temporal measurements of photofragment attenuation at 248 nm in the laser ablation of polyimide in air , 1987 .

[5] P. Martin,et al. Characterization of growing thin films by in situ ellipsometry, spectral reflectance and transmittance measurements, and ion‐scattering spectroscopy , 1985 .

[6] S. Murarka,et al. Effect of Growth Parameters on the CVD of Boron Nitride and Phosphorus‐Doped Boron Nitride , 1979 .

[7] R. Azzam,et al. Ellipsometry and polarized light , 1977 .

[8] R. H. Wentorf. Preparation of Semiconducting Cubic Boron Nitride , 1962 .