Nanostructured lasers: Electrons and holes get closer.

Nanowires that exhibit very sharp emission due to the formation of quantum states within them have been used to fabricate low threshold current lasers emitting ultraviolet light.

[1]  S. Denbaars,et al.  Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting , 2013, Journal of Display Technology.

[2]  Makoto Kasu,et al.  Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices , 2011 .

[3]  Takashi Mukai,et al.  P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes , 1993 .

[4]  Z. Mi,et al.  Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature. , 2015, Nature nanotechnology.

[5]  Nelson Tansu,et al.  Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells. , 2011, Optics express.

[6]  S. Nutt,et al.  InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays. , 2012, Nano letters.

[7]  Nelson Tansu,et al.  Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers , 2010 .

[8]  Isamu Akasaki,et al.  Widegap Column‐ III Nitride Semiconductors for UV/Blue Light Emitting Devices , 1994 .

[9]  Nelson Tansu,et al.  Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes , 2011 .

[10]  Hirofumi Kan,et al.  Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode , 2008 .

[11]  Ronald A. Arif,et al.  Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes , 2007 .