Distribution of silicon over sublattices in semiconducting A3B5 compounds
暂无分享,去创建一个
[1] Ruban,et al. Ground-state properties of ordered, partially ordered, and random Cu-Au and Ni-Pt alloys. , 1995, Physical review. B, Condensed matter.
[2] Ruban,et al. Madelung energy for random metallic alloys in the coherent potential approximation. , 1995, Physical review. B, Condensed matter.
[3] R. Newman. The lattice locations of silicon impurities in GaAs: effects due to stoichiometry, the Fermi energy, the solubility limit and DX behaviour , 1994 .
[4] Zhang,et al. Dopant and defect energetics: Si in GaAs. , 1993, Physical review. B, Condensed matter.
[5] Baraff,et al. Electronic structure, total energies, and abundances of the elementary point defedts in GaAs. , 1985, Physical review letters.
[6] Christensen Ne. Structural phase stability of B2 and B32 intermetallic compounds. , 1985 .
[7] G. A. Baraff,et al. Migration of interstitials in silicon , 1984 .
[8] M. Scheffler,et al. Optical properties of As antisite and EL2 defects in GaAs , 1984 .
[9] Ove Jepsen,et al. Self-consistent impurity calculations in the atomic-spheres approximation , 1983 .
[10] A. Zunger,et al. Self-interaction correction to density-functional approximations for many-electron systems , 1981 .
[11] M. Lannoo,et al. Point Defects in Semiconductors II , 1981 .