Generation of interface states in nitrided oxide gate dielectrics by ionizing radiation and Fowler–Nordheim stressing

Annealing of silicon dioxide gate dielectrics in ammonia is known to suppress interface state generation under ionizing radiation. However, under high field stress interface state generation in lightly nitrided oxides is found to be comparable to that in the unaltered oxide, while it is reduced in heavily nitrided oxides and eliminated altogether in reoxidized samples of either type.

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