Spectroscopy of surface states using the excess noise in a buried-channel MOS transistor

Abstract Generation-recombination noise is observed in the conductance of buried-channel MOS transistors when the surface is partly depleted. This noise is shown to be caused by transitions to and from surface states. The intensity of the fluctuations is a measure of the surface state density. At each surface potential three traps are observed with different time constants, or cross sections.

[1]  R. Howard,et al.  Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency ( 1 f ?) Noise , 1984 .

[2]  J. Chang,et al.  Low-temperature characterization of buried-channel NMOST , 1989 .

[3]  A. Ziel,et al.  1/ƒ noise in diffused and ion-implanted MOS capacitors , 1983 .

[4]  Collins,et al.  Anomalous telegraph noise in small-area silicon metal-oxide-semiconductor field-effect transistors. , 1988, Physical review. B, Condensed matter.

[5]  T. Watanabe,et al.  Low-noise operation in buried-channel MOSFET's , 1985, IEEE Electron Device Letters.

[6]  The excess noise in buried-channel MOS transistors , 1987 .

[7]  A. Ziel,et al.  EFFECT OF TRAP DISTRIBUTION ON G-R NOISE SPECTRA , 1982 .

[8]  C. Sah,et al.  Frequency response of Si–SiO2 interface states on thin oxide MOS capacitors , 1972 .

[9]  Werner,et al.  Noise spectroscopy of silicon grain boundaries. , 1988, Physical Review B (Condensed Matter).

[10]  Dietrich Wolf,et al.  Noise in physical systems , 1978 .

[11]  M. J. Kirton,et al.  Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise , 1989 .

[12]  J. Mavor,et al.  Low-noise operation of buried channel MOS transistors , 1987 .

[13]  K. Kandiah,et al.  LOW FREQUENCY NOISE IN JUNCTION FIELD EFFECT TRANSISTORS , 1978 .

[14]  Vuillaume,et al.  Spatial and energetic distribution of Si-SiO2 near-interface states. , 1988, Physical review. B, Condensed matter.