VERY SMALL OXIDE-CONFINED VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH A BULK ACTIVE REGION

Data are presented characterizing very small oxide aperture vertical-cavity surface-emitting lasers with a 0.5-μm-thick bulk GaAs active region. The transverse far field is independent of the aperture size for diameters ⩽3 μm, although threshold reduction occurs with reducing aperture size down to ∼0.5 μm diam. Threshold reduction is attributed to improved overlap between the optical mode and gain profile. The large signal temporal response is characterized using optical gain switching.

[1]  Kenichi Iga,et al.  Surface emitting semiconductor lasers , 1988 .

[2]  S. Kuppens,et al.  Evidence of nonuniform phase-diffusion in a bad-cavity laser , 1995 .

[3]  K. Geib,et al.  Low threshold voltage vertical-cavity lasers fabricated by selective oxidation , 1994 .

[4]  L. Coldren,et al.  Reduced optical scattering loss in vertical-cavity lasers using a thin (300 /spl Aring/) oxide aperture , 1996, IEEE Photonics Technology Letters.

[5]  De Martini F,et al.  Transverse quantum correlations in the active microscopic cavity. , 1990, Physical review letters.

[6]  D. Deppe,et al.  Mode dependence on mirror contrast in Fabry-Perot microcavity lasers , 1994, IEEE Photonics Technology Letters.

[7]  Kent D. Choquette,et al.  Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency , 1995 .

[8]  P. Dapkus,et al.  Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation , 1995 .

[9]  Jichul Shin,et al.  Transverse and temporal mode dependence on mirror contrast in microcavity lasers , 1995 .

[10]  K. Choquette,et al.  Index guiding dependent effects in implant and oxide confined vertical-cavity lasers , 1996, IEEE Photonics Technology Letters.

[11]  Kikuo Ujihara,et al.  Spontaneous emission and oscillation in a planar microcavity dye laser , 1994 .

[12]  VOLUME EXCITATION OF AN ULTRATHIN SINGLE‐MODE CdSe LASER , 1966 .

[13]  Kent D. Choquette,et al.  Threshold investigation of oxide‐confined vertical‐cavity laser diodes , 1996 .

[14]  D. Deppe,et al.  Sub-40 μA continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors , 1996, IEEE Photonics Technology Letters.

[15]  Diana L. Huffaker,et al.  Size effects in small oxide confined vertical‐cavity surface‐emitting lasers , 1996 .

[16]  Kenichi Iga,et al.  Record low-threshold index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure , 1995 .

[17]  D. Deppe,et al.  Native-Oxide Defined Ring Contact for Low Threshold Vertical-Cavity Lasers , 1994 .

[18]  A. R. Sugg,et al.  Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices , 1990 .

[19]  Diana L. Huffaker,et al.  Low threshold half-wave vertical-cavity lasers , 1994 .

[20]  Paul L. Gourley,et al.  Visible, room‐temperature, surface‐emitting laser using an epitaxial Fabry–Perot resonator with AlGaAs/AlAs quarter‐wave high reflectors and AlGaAs/GaAs multiple quantum wells , 1987 .

[21]  A. Scherer,et al.  Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization , 1991 .