Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors
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Josef Zweck | Oliver Ambacher | Wolfgang Gebhardt | James R. Shealy | S. Kaiser | Joseph A. Smart | R. Dimitrov | O. Ambacher | J. Shealy | S. Kaiser | J. Smart | A. Schremer | J. Zweck | R. Dimitrov | A. Schremer | M. Jakob | W. Gebhardt | M. Jakob
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