Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors

Transmission electron microscopy (TEM) investigations of metal organic vapor phase deposition grown AlxGa1−xN/GaN heterostructures on Si(111) containing an AlN high-temperature buffer layer have been carried out. The structural properties at the interface and in the epilayer as well as the electronic properties suitable for a high electron mobility transistor (HEMT) were analyzed and compared with systems grown on Al2O3(0001). High resolution TEM (HRTEM) at the AlN/Si(111) interface reveals a 1.5–2.7 nm thick amorphous SiNx layer due to the high growth temperature of TAlN=1040 °C. Therefore, a grain-like GaN/AlN region extending 40–60 nm appears and it is subsequently overgrown with (0001) orientated GaN material because of geometrical selection. The residual strain at the AlN/Si(111) interface is estimated to be er=0.3±0.6% by Fourier filtering of HRTEM images and a moire fringe analysis. This indicates almost complete relaxation of the large mismatch f(AlN/Si)=+23.4% which seems to be supported by the S...

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