Aluminum-free 980-nm GaInAs/GaInAsP/GaInP pump lasers
暂无分享,去创建一个
M. Pessa | Pekka Savolainen | A. Ovtchinnikov | J. Nappi | M. Pessa | G. Zhang | J. Nappi | A. Ovtchinnikov | H. Asonen | G. Zhang | Harry M. Asonen | P. Savolainen
[1] M. Pessa,et al. Gain Characteristics of Strained-Layer InGaAs/GaAs Quantum Well Lasers , 1993 .
[2] T. Kamiya,et al. Axial Mode Spectra of Planar Stripe Geometry Laser Diodes , 1982 .
[3] Mode stability in real index-guided semiconductor laser arrays , 1985 .
[4] M. Pessa,et al. High-power operation of aluminum-free ( kappa =0.98 mu m) pump laser for erbium-doped fiber amplifier , 1993, IEEE Photonics Technology Letters.
[5] Francoise Chatenoud,et al. Extremely low threshold current strained InGaAs/AlGaAs lasers by molecular beam epitaxy , 1991 .
[6] M. Pessa,et al. Low threshold current InGaAs/GaAs/GaInP lasers grown by gas‐source molecular beam epitaxy , 1992 .
[7] Tsuyoshi Uda,et al. A two-dimensional device simulator of semiconductor lasers , 1987 .
[8] Wilfried Lenth,et al. Very high-power (425 mW) AlGaAs SQW-GRINSCH ridge laser with frequency-doubled output (41 mW at 428 nm) , 1991 .
[9] M. Amann,et al. Calculation of the effective refractive-index step for the metal-cladded-ridge-waveguide laser. , 1981, Applied optics.
[10] James J. Coleman,et al. Threshold current density in strained layer In/sub x/Ga/sub 1-x/As-GaAs quantum-well heterostructure lasers , 1992 .
[11] S. L. Yellen,et al. Dark-line-resistant, aluminum-free diode laser at 0.8 mu m , 1992, IEEE Photonics Technology Letters.
[12] M. Yamada,et al. A condition of single longitudinal mode operation in injection lasers with index-guiding structure , 1979, IEEE Journal of Quantum Electronics.
[13] M. Ohkubo,et al. Aluminium free InGaAs/GaAs/InGaAsP/InGaP GRINSCH SL-SQW lasers at 0.98 mu m , 1992 .
[14] J. Whiteaway,et al. Self stabilisation of the fundamental lateral mode in index-guided semiconductor lasers , 1987 .
[15] S. Kumashiro,et al. Two-dimensional numerical analysis of lasing characteristics for self-aligned structure semiconductor lasers , 1990 .
[16] H. Okamoto,et al. High power CW operation of aluminium-free InGaAs/GaAs/InGaP strained layer single quantum well ridge waveguide lasers , 1990, 12th IEEE International Conference on Semiconductor Laser.
[17] E. Desurvire,et al. Spectral noise figure of Er/sup 3+/-doped fiber amplifiers , 1990, IEEE Photonics Technology Letters.
[18] H. Choi,et al. InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency , 1990 .
[19] G. Zhang,et al. Temperature sensitivity of strained-layer InGaAs/Ga(In)As(P)/GaInP separate-confinement-heterostructure quantum well lasers (λ∼980 nm) , 1993 .
[20] D. Garbuzov,et al. High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers , 1991 .
[21] M. Pessa,et al. Aluminium-free 980 nm laser diodes , 1993 .
[22] D. Scifres,et al. An analytic study of (GaAl)As gain guided lasers at threshold , 1982, IEEE Journal of Quantum Electronics.
[23] Edik U. Rafailov,et al. High‐power buried InGaAsP/GaAs (λ=0.8 μm) laser diodes , 1993 .
[24] Th. Forster,et al. High‐power operation of strained InGaAs/AlGaAs single quantum well lasers , 1991 .
[25] M. Pessa,et al. Optimization and characteristics of Al-free strained-layer InGaAs/GaInAsP/GaInP SCH-QW lasers ( lambda approximately 980 nm) grown by gas-source MBE , 1993 .
[26] H. Horikawa,et al. High‐power InGaAs‐GaAs strained quantum well lasers with InGaP cladding layers on p‐type GaAs substrates , 1992 .
[27] Paul R. Berger,et al. Performance characteristics of GaInAs/GaAs large optical cavity quantum well lasers , 1991 .
[28] M.C. Wu,et al. High-power 980-nm AlGaAs/InGaAs strained quantum-well laser grown by OMVPE , 1991, IEEE Photonics Technology Letters.
[29] M. Yamada. Transverse and longitudinal mode control in semiconductor injection lasers , 1983 .
[30] D. C. Flanders,et al. High-reliability, high-performance Al-free strained-layer quantum-well RWG 980-nm pump lasers , 1993 .
[31] James J. Coleman,et al. Carrier recombination rates in strained-layer InGaAs-GaAs quantum wells , 1991 .
[32] R. Lang,et al. Lateral transverse mode instability and its stabilization in stripe geometry injection lasers , 1979 .