A novel robust TiN/AHO/TiN capacitor and CoSi/sub 2/ cell pad structure for 70nm stand-alone and embedded DRAM technology and beyond
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H.S. Kim | J.M. Park | Y.S. Hwang | H.K. Hwang | M.H. Cho | B.J. Park | Kinam Kim | I.S. Park | D.I. Kim | Y.G. Park | J.-H. Ku | M.-C. Sun | B.Y. Nam | D.S. Hwang | S.H. Lee | G.Y. Kim | M.Y. Jeong | S.E. Kim | J.-H. Chung | C.-Y. Yoo | J.H. Lee | Y.R. Park | C.-S. Kim | S. Choi