SEU evaluation of SRAM memories for space applications

SEU cross-sections were obtained for three different SRAM memories. The 1 Mbit White Electronics WMS128k8, the 256 kbit Austin MT5C2564 and the 256 kbit Austin MT5C2568 SRAMs were tested. The SEU thresholds, respectively were 1 MeV cm/sup 2//mg, 1.4 MeV cm/sup 2//mg, and 1.8 MeV cm/sup 2//mg. SEL thresholds were also obtained. These were 37 MeV cm/sup 2//mg, 37 MeV cm/sup 2//mg and 59 MeV cm/sup 2//mg, respectively.

[1]  O. Musseau,et al.  Analysis of single event effects at grazing angle , 1997, RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294).

[2]  Marty R. Shaneyfelt,et al.  Impact of technology trends on SEU in CMOS SRAMs , 1996 .

[3]  R. Koga,et al.  SEU characterization of a hardened CMOS 64K and 256K SRAM , 1989 .

[4]  C. Detcheverry,et al.  SEU critical charge and sensitive area in a submicron CMOS technology , 1997 .

[5]  R.A. Reed,et al.  Shape of the response curve in SEU testing , 1995, Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems.

[6]  A. B. Campbell,et al.  Analysis of multiple bit upsets (MBU) in CMOS SRAM , 1996 .