Mechanistic feature-scale profile simulation of SiO2 low-pressure chemical vapor deposition by tetraethoxysilane pyrolysis

Simulation of chemical vapor deposition in submicron features typical of semiconductor devices has been facilitated by extending the EVOLVE [T. S. Cale, T. H. Gandy, and G. B. Raupp, J. Vac. Sci. Technol. A 9, 524 (1991)] thin film etch and deposition simulation code to use thermal reaction mechanisms expressed in the Chemkin format. This allows consistent coupling between EVOLVE and reactor simulation codes that use Chemkin. In an application of a reactor-scale simulation code providing surface fluxes to a feature-scale simulation code, a proposed reaction mechanism for tetraethoxysilane [Si(OC2H5)4] pyrolysis to deposit SiO2, which had been applied successfully to reactor-scale simulation, does not correctly predict the low step coverage over trenches observed under short reactor residence time conditions. One apparent discrepancy between the mechanism and profile-evolution observations is a reduced degree of sensitivity of the deposition rate to the presence of reaction products, i.e., the by-product i...