Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses
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S. O. Park | I. Baek | M.S. Lee | S. Seo | M. Lee | D. Seo | D. Suh | J.C. Park | S.O. Park | H. Kim | I. Yoo | U. Chung | J. Moon | J. Moon | D.‐S. Suh | Myoung‐Jae Lee | Moon-sook Lee | S.H. Seo | Jong-Il Park | Hyun-Suk Kim | D.-S. Suh
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