Luminescences from localized states in InGaN epilayers

Optical spectra of the bulk three-dimensional InGaN alloys were measured using the commercially available light-emitting diode devices and their wafers. The emission from undoped InxGa1−xN(x<0.1) was assigned to the recombination of excitons localized at the potential minima originating from the large compositional fluctuation. The emission from heavily impurity-doped InGaN was also pointed out related to the localized states.

[1]  H. Amano,et al.  Shortest wavelength semiconductor laser diode , 1996 .

[2]  John F. Muth,et al.  Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light‐emitting diodes , 1996 .

[3]  S. Chichibu,et al.  Photoreflectance of Cu‐based I–III–VI2 heteroepitaxial layers grown by metalorganic chemical vapor deposition , 1996 .

[4]  Hyuk-Joo Kwon,et al.  Raman spectra of indium nitride thin films grown by microwave‐excited metalorganic vapor phase epitaxy on (0001) sapphire substrates , 1996 .

[5]  Takashi Mukai,et al.  High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes , 1994 .

[6]  Z. Feng,et al.  Optical transitions in InxGa1−xN alloys grown by metalorganic chemical vapor deposition , 1996 .

[7]  Petr G. Eliseev,et al.  Low-temperature study of current and electroluminescence in InGaN/AlGaN/GaN double-heterostructure blue light-emitting diodes , 1996 .

[8]  S. Nakamura,et al.  Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes , 1996 .

[9]  Shuji Nakamura,et al.  Polarized Raman spectra in GaN , 1995 .

[10]  T. S. Moss,et al.  Handbook on semiconductors , 1980 .

[11]  K. Eguchi,et al.  High concentration Zn doping in InP grown by low‐pressure metalorganic chemical vapor deposition , 1990 .

[12]  David E. Aspnes,et al.  Third-derivative modulation spectroscopy with low-field electroreflectance , 1973 .

[13]  S. Nakamura,et al.  Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers , 1996 .

[14]  John E. Bowers,et al.  Radiative recombination lifetime measurements of InGaN single quantum well , 1996 .

[15]  S. Nakamura,et al.  Spontaneous emission of localized excitons in InGaN single and multiquantum well structures , 1996 .

[16]  T. Matsuoka,et al.  Wide-gap semiconductor InGaN and InGaAln grown by MOVPE , 1992 .

[17]  Isamu Akasaki,et al.  Exciton lifetimes in GaN and GaInN , 1995 .

[18]  M. Khan,et al.  Photoluminescence study of high quality InGaN–GaN single heterojunctions , 1996 .

[19]  Guangde Chen,et al.  Time-resolved photoluminescence studies of InGaN epilayers , 1996 .

[20]  Takashi Mukai,et al.  High-Quality InGaN Films Grown on GaN Films , 1992 .