Luminescences from localized states in InGaN epilayers
暂无分享,去创建一个
Shuji Nakamura | Takayuki Sota | Shigefusa F. Chichibu | S. Nakamura | T. Sota | S. Chichibu | T. Azuhata | T. Azuhata
[1] H. Amano,et al. Shortest wavelength semiconductor laser diode , 1996 .
[2] John F. Muth,et al. Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light‐emitting diodes , 1996 .
[3] S. Chichibu,et al. Photoreflectance of Cu‐based I–III–VI2 heteroepitaxial layers grown by metalorganic chemical vapor deposition , 1996 .
[4] Hyuk-Joo Kwon,et al. Raman spectra of indium nitride thin films grown by microwave‐excited metalorganic vapor phase epitaxy on (0001) sapphire substrates , 1996 .
[5] Takashi Mukai,et al. High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes , 1994 .
[6] Z. Feng,et al. Optical transitions in InxGa1−xN alloys grown by metalorganic chemical vapor deposition , 1996 .
[7] Petr G. Eliseev,et al. Low-temperature study of current and electroluminescence in InGaN/AlGaN/GaN double-heterostructure blue light-emitting diodes , 1996 .
[8] S. Nakamura,et al. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes , 1996 .
[9] Shuji Nakamura,et al. Polarized Raman spectra in GaN , 1995 .
[10] T. S. Moss,et al. Handbook on semiconductors , 1980 .
[11] K. Eguchi,et al. High concentration Zn doping in InP grown by low‐pressure metalorganic chemical vapor deposition , 1990 .
[12] David E. Aspnes,et al. Third-derivative modulation spectroscopy with low-field electroreflectance , 1973 .
[13] S. Nakamura,et al. Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers , 1996 .
[14] John E. Bowers,et al. Radiative recombination lifetime measurements of InGaN single quantum well , 1996 .
[15] S. Nakamura,et al. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures , 1996 .
[16] T. Matsuoka,et al. Wide-gap semiconductor InGaN and InGaAln grown by MOVPE , 1992 .
[17] Isamu Akasaki,et al. Exciton lifetimes in GaN and GaInN , 1995 .
[18] M. Khan,et al. Photoluminescence study of high quality InGaN–GaN single heterojunctions , 1996 .
[19] Guangde Chen,et al. Time-resolved photoluminescence studies of InGaN epilayers , 1996 .
[20] Takashi Mukai,et al. High-Quality InGaN Films Grown on GaN Films , 1992 .