论文信息 - Interface control of GaN/AlGaN quantum well structures in MOVPE growth

Interface control of GaN/AlGaN quantum well structures in MOVPE growth

The interface control of GaN/AlGaN quantum well (QW) structures was studied to realize high-quality QWs. Various growth interruption programs were carried out to obtain clear X-ray satellite peaks from the QW and to obtain a good surface morphology. From AFM observations, it was clarified that the growth interruption with flowing ammonia can decrease the roughness of surfaces. Satellite peaks were observed by an X-ray diffraction of samples with suitable growth interruptions. We also demonstrated 14 pair AlN/GaN multilayer reflectors on a sapphire substrate.

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