An improved deep submicrometer MOSFET RF nonlinear model with new breakdown current model and drain-to-substrate nonlinear coupling
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Joy Laskar | Edward Gebara | M. Hamai | Deukhyoun Heo | Youngsuk Suh | Yi-Jan Emery Chen | J. Laskar | D. Heo | E. Gebara | Y. Chen | Y. Suh | S. Yoo | M. Hamai | Seung-Yup Yoo
[1] M. Miller,et al. A new empirical large signal model for silicon RF LDMOS FETs , 1997, 1997 IEEE MTT-S Symposium on Technologies for Wireless Applications Digest.
[2] Yi-Jen Chan,et al. Characteristics of deep-submicrometer MOSFET and its empirical nonlinear RF model , 1998 .
[3] Mansun Chan,et al. A physical and scalable I-V model in BSIM3v3 for analog/digital circuit simulation , 1997 .
[4] U. Lott,et al. Microwave frequency measurements and modeling of MOSFETs on low resistivity silicon substrates , 1996, Proceedings of International Conference on Microelectronic Test Structures.
[5] R.M.D.A. Velghe,et al. Compact MOS modeling for analog circuit simulation , 1993, Proceedings of IEEE International Electron Devices Meeting.
[6] Dimitri A. Antoniadis,et al. Modeling the I-V characteristics of fully-depleted SOI MOSFETs including self-heating , 1994, Proceedings. IEEE International SOI Conference.
[7] E. Chen,et al. Temperature dependent MOSFET RF large signal model incorporating self heating effects , 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).
[8] Suet Fong Tin,et al. Substrate network modeling for CMOS RF circuit simulation , 1999, Proceedings of the IEEE 1999 Custom Integrated Circuits Conference (Cat. No.99CH36327).
[9] S.E. Laux,et al. A study of channel avalanche breakdown in scaled n-MOSFET's , 1987, IEEE Transactions on Electron Devices.
[10] N. Camilleri,et al. A silicon MOS process for integrated RF power amplifiers , 1996, IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers.
[11] G. Guegan,et al. High-frequency performance of submicrometer channel-length silicon MOSFETs , 1991, IEEE Electron Device Letters.
[12] Mario Pinto-Guedes,et al. A circuit simulation model for bipolar-induced breakdown in MOSFET , 1988, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..
[13] Martin L. Schmatz,et al. A nonlinear microwave MOSFET model for SPICE simulators , 1998 .
[14] W. R. Curtice,et al. Self-Consistent GaAs FET Models for Amplifier Design and Device Diagnostics , 1984 .
[15] W.R. Curtice,et al. A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FETs , 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).
[16] H. Zirath,et al. A new empirical nonlinear model for HEMT and MESFET devices , 1992 .
[17] Mau-Chung Frank Chang,et al. High-frequency application of MOS compact models and their development for scalable RF model libraries , 1998, Proceedings of the IEEE 1998 Custom Integrated Circuits Conference (Cat. No.98CH36143).
[18] Thomas J. Brazil,et al. A scalable general-purpose model for microwave FETs including DC/AC dispersion effects , 1997 .
[19] S. Asai,et al. A numerical model of avalanche breakdown in MOSFET's , 1978, IEEE Transactions on Electron Devices.
[20] Hei Wong,et al. A physically-based MOS transistor avalanche breakdown model , 1995 .
[21] J. Teyssier,et al. A new nonlinear I(V) model for FET devices including breakdown effects , 1994, IEEE Microwave and Guided Wave Letters.
[22] E. Morifuji,et al. 0.2 /spl mu/m analog CMOS with very low noise figure at 2 GHz operation , 1996, 1996 Symposium on VLSI Technology. Digest of Technical Papers.
[23] Cheon Soo Kim,et al. Unique extraction of substrate parameters of common-source MOSFETs , 1999 .