论文信息 - Experimental studies on robustness of super junction VDMOS during the body diode reverse recovery

Experimental studies on robustness of super junction VDMOS during the body diode reverse recovery

Experiments are carried out to investigate the relationship between the robustness of super junction VDMOS (hereafter SJ-VDMOS) and its body diode characteristics. It is found that the voltage overshoot is responsible for the device failure. The mechanism of voltage overshoot has been analyzed thoroughly and some measures to smooth the overshoot are provided. The improved 600V SJ-VDMOS shows a higher ruggedness during its body diode reverse recovery.

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