Effects of detrapping on electron traps generated in gate oxides

Electron trap generation in the gate oxide is a major reliability problem, since it can cause stress-induced leakage current and oxide breakdown. In this paper, traps are created either by the substrate hole injection or the Fowler–Nordheim injection. The attention is focused on how detrapping affects the generated traps. The detrapping is achieved by different techniques, including electron–hole recombination, and field or thermally assisted tunnelling. It will be shown that the tunnelling-induced detrapping leads to trap losses, while the detrapping by recombination does not. The factors contributing to the trap loss are investigated, including the possible effects of annealing and gate biases.

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