Growth and characterization of high-purity SiC single crystals
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[1] R. C. Clarke,et al. Large diameter 6H-SiC for microwave device applications , 1994 .
[2] G. Pensl,et al. Hydrogenation of lithium- and calcium-related defect centers in silicon , 1995 .
[3] S. Sriram,et al. 4H-SiC MESFET's with 42 GHz f/sub max/ , 1996, IEEE Electron Device Letters.