STM study of structural changes on Si(100)2×1-Sb surface induced by atomic hydrogen

[1]  K. Oura,et al.  Adsorption of atomic hydrogen on the Si(001) 4×3-In surface studied by coaxial impact collision ion scattering spectroscopy and scanning tunneling microscopy , 1999 .

[2]  I. Kravchenko,et al.  STM studies of the initial stages of growth of Sb on Si(100) surfaces , 1999 .

[3]  D. Bowler,et al.  Bismuth-induced structures on Si(001) surfaces , 1999 .

[4]  K. Oura,et al.  Quasi-Medium Energy Ion Scattering Spectroscopy Observation of a Ge δ-doped Layer Fabricated by Hydrogen Mediated Epitaxy , 1998 .

[5]  T. Numata,et al.  STM OBSERVATION OF THE ATOMIC HYDROGEN INTERACTION WITH THE SI(111)31 31-IN SURFACE , 1998 .

[6]  K. Oura,et al.  Adsorption of Atomic Hydrogen on the Si(100)-(2×1)-Sb Surface , 1997 .

[7]  T. Numata,et al.  Indium-induced Si(111)4×1 silicon substrate atom reconstruction , 1997 .

[8]  Y. Okada,et al.  Basic analysis of atomic‐scale growth mechanisms for molecular beam epitaxy of GaAs using atomic hydrogen as a surfactant , 1996 .

[9]  K. Oura,et al.  Atomic‐hydrogen‐induced Ag cluster formation on Si(111)‐√3×√3–Ag surface observed by scanning tunneling microscopy , 1996 .

[10]  K. Oura,et al.  Scanning tunneling microscopy observation of hydrogen‐induced Ag cluster formation on the Si(111) surfaces , 1995 .

[11]  A. Hirata,et al.  Strontium and SrO epitaxy on hydrogen‐terminated Si(111) , 1994 .

[12]  F. Shoji,et al.  Low energy ion scattering study of hydrogen-induced reordering of Pb monolayer films on Si(111) surfaces , 1994 .

[13]  J. V. D. Veen,et al.  The interaction of Sb overlayers with Si(001) , 1992 .

[14]  M. Copel,et al.  Are bare surfaces detrimental in epitaxial growth , 1991 .

[15]  Kobayashi,et al.  Hydrogen-mediated epitaxy of Ag on Si(111) as studied by low-energy ion scattering. , 1991, Physical review letters.

[16]  C. Quate,et al.  Structure of the Sb‐terminated Si(100) surface , 1991 .

[17]  F. Shoji,et al.  Hydrogen-termination effects on the growth of Ag thin films on Si(111) surfaces , 1991 .

[18]  Boland Structure of the H-saturated Si(100) surface. , 1990, Physical review letters.

[19]  Reuter,et al.  Influence of surfactants in Ge and Si epitaxy on Si(001). , 1990, Physical review. B, Condensed matter.

[20]  A. Saranin,et al.  Solid phase epitaxial growth of Si on SiSb surface phases for the formation of δ-doped layers and δiδi-superlattices , 1990 .