论文信息 - Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation - 字舞流文

Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation

M. Jaraíz | J. Rubio | I. Martín-Bragado | R. Pinacho | P. Castrillo | J. Barbolla

[1] Jagadish,et al. Crystalline-to-amorphous transition for Si-ion irradiation of Si(100). , 1991, Physical review. B, Condensed matter.

[2] Amorphization of silicon by elevated temperature ion irradiation , 1995 .

[3] Meijie Tang,et al. Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination, and formation volumes , 1997 .

[4] Andrew G. Glen,et al. APPL , 2001 .

[5] G. Gilmer,et al. Atomistic modeling of amorphization and recrystallization in silicon , 2003 .

[6] Christos Tsamis,et al. Simulation of Semiconductor Processes and Devices 2001 , 2012 .