Photoetching method that provides improved silicon-on-insulator layer thickness uniformity in a defined area
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K. Kawai | J. Uchikoshi | M. Morita | Kenta Arima | Yukimasa Miyata | Yasunori Nakamukai | C. Azevedo | M. Morita
[1] Y. Sano,et al. Numerically controlled atmospheric-pressure plasma sacrificial oxidation using electrode arrays for improving silicon-on-insulator layer uniformity , 2014 .
[2] Toshinori Hirano,et al. Characterization of Si etching with N-fluoropyridinium salt , 2012 .
[3] T. Kawase,et al. Photoetching of Silicon by N-Fluoropyridinium Salt , 2010 .
[4] David J. Lockwood,et al. Band gap of nanometer thick Si/SiO2 quantum wells: theory versus experiment , 2008, Photonics North.
[5] Hidekazu Mimura,et al. Fabrication of ultrathin and highly uniform silicon on insulator by numerically controlled plasma chemical vaporization machining. , 2007, The Review of scientific instruments.
[6] M. Green,et al. Photoluminescence in crystalline silicon quantum wells , 2007 .
[7] M. Morita,et al. Tunneling Current through Ultrathin Silicon Dioxide Films under Light Exposure , 2004 .
[8] V. Senez,et al. Formation of silicon islands on a silicon on insulator substrate upon thermal annealing , 2000 .
[9] A. M. Ledger,et al. Plasma thinning of silicon-on-insulator bonded wafers , 1993 .
[10] T. Umemoto,et al. Power and Structure-Variable Fluorinating Agents. The N- Fluoropyridinium Salt System. , 1990 .
[11] T. Umemoto,et al. N-Fluoropyridinium triflate and its analogs, the first stable 1:1 salts of pyridine nucleus and halogen atom , 1986 .