Nanosecond-order fast switching and ultra-multilevel storage in lateral GeTe and Ge1Sb4Te7-based phase-change memories

In this study, we first investigated fast switching in a lateral GeTe-based phase-change memory (PCM). The lateral device with a top conducting layer exhibited a good performance. The operation characteristics of the GeTe-based lateral PCM device showed that it can be operated even when 5-ns voltage pulses were applied, which was much faster than any other lateral PCM device reported. On the other hand, Ge1Sb4Te7 was then adopted as the storage media for ultra-multiple resistance levels. The ultra-multi 23 resistance levels in Ge1Sb4Te7 lateral phase-change memory device were demonstrated by controlling the maximum sweeping currents. The cycling of the 6 multi resistance levels, distinguishable from each other, were also demonstrated. This study indicated that Ge1Sb4Te7 is a media suitable for stable ultra-multilevel storage, enabling low-cost ultrahigh-density nonvolatile memory.

[1]  Shih-Hung Chen,et al.  Phase-change random access memory: A scalable technology , 2008, IBM J. Res. Dev..

[2]  A. Pirovano,et al.  Non-volatile memory technologies: emerging concepts and new materials , 2004 .

[3]  G. G. Stokes.  "J." , 1890, The New Yale Book of Quotations.

[4]  Peng Zhou,et al.  Role of TaON interface for CuxO resistive switching memory based on a combined model , 2009 .

[5]  Bingchu Cai,et al.  Design of multi-states storage medium for phase change memory , 2007 .

[6]  Sumio Hosaka,et al.  Characterization of nitrogen-doped Sb2Te3 films and their application to phase-change memory , 2007 .

[7]  C. Nan,et al.  High-density magnetoresistive random access memory operating at ultralow voltage at room temperature , 2011, Nature communications.

[8]  Ananth Dodabalapur,et al.  Non‐Volatile Organic Memory Applications Enabled by In Situ Synthesis of Gold Nanoparticles in a Self‐Assembled Block Copolymer , 2008 .

[9]  Luping Shi,et al.  Programming current density reduction for elevated-confined phase change memory with a self-aligned oxidation TiWOx heater , 2014 .

[10]  Andrew G. Glen,et al.  APPL , 2001 .

[11]  M. Lankhorst,et al.  Low-cost and nanoscale non-volatile memory concept for future silicon chips , 2005, Nature materials.

[12]  V. Weidenhof,et al.  Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements , 2000 .

[13]  Hosang Lee,et al.  Large Resistive Switching in Ferroelectric BiFeO3 Nano‐Island Based Switchable Diodes , 2013, Advanced materials.

[14]  Songlin Feng,et al.  One order of magnitude faster phase change at reduced power in Ti-Sb-Te , 2014, Nature Communications.

[15]  Sumio Hosaka,et al.  A Novel Lateral Phase-Change Random Access Memory Characterized by Ultra Low Reset Current and Power Consumption , 2006 .

[16]  Prasanna Kumar Sahu,et al.  Estimation of analog/RF figures-of-merit using device design engineering in gate stack double gate MOSFET , 2015 .

[17]  A. Kaya,et al.  Materials Science in Semiconductor Processing , 2014 .