Fabrication Of A-C:B/N-Si Solar Cells With Low Positive Bias By Custom-Made-CVD

Boron doped amorphous carbon (a-C:B) film fabricated on n-type silicon using waste palm oil precursor by low positive bias voltage is presented. The rectifying curve were found for all samples under dark measurement revealed that those samples were p-type semiconductor. The +30 V was found the optimized of the electronic properties with the open circuit voltage (VOC), current density (JSC), fill factor (FF) and efficiency (%) were approximately 0.259034 V, 1.299456 mA/cm 2 , 0.240011, and 0.080788 %, respectively. The conversion efficiency of a-C:B has been improved under the influenced of low positive bias.

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