Gated-mode single-photon detection at 1550 nm by discharge pulse counting

Gated-mode single-photon detection using an avalanche photodiode is characterized by charge and discharge pulses, which are attributable to capacitive behavior. In this letter, the discharge pulse rather than the photon-induced avalanche pulse is counted in single-photon detection, in order to reduce after pulses. A demonstration adopts an indium–gallium–arsenide avalanche photodiode operating at 1550 nm. After-pulse probability per gate is evaluated at a repetition frequency of 5 MHz.

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