Overcompensation of misfit strain by dislocation networks in phosphorus implanted (001) silicon
暂无分享，去创建一个
[1] U. Gösele,et al. Interstitial supersaturation near phosphorus‐diffused emitter zones in silicon , 1979 .
[2] Masayuki Yoshida. Numerical Solution of Phosphorus Diffusion Equation in Silicon , 1979 .
[3] W. Bartels,et al. Determination of the lattice constant of epitaxial layers of III-V compounds , 1978 .
[4] W. Bartels,et al. X-ray double-crystal diffractometry of Ga1−xAlxAs epitaxial layers , 1978 .
[5] R. Fair. Quantified Conditions for Emitter‐Misfit Dislocation Formation in Silicon , 1978 .
[6] Richard B. Fair,et al. A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect , 1977 .
[7] Masao Tamuka. Dislocation networks in phosphorus-implanted silicon , 1977 .
[8] A. Fukuhara,et al. Determination of strain distributions from X‐ray Bragg reflexion by silicon single crystals , 1977 .
[9] K. Seshan,et al. Some new results in the characterization of defects in phosphorus ion-implanted silicon , 1975 .
[10] M. Tamura,et al. Tertiary defects in phosphorus-implanted silicon , 1975 .
[11] M. Loretto,et al. Defect analysis in electron microscopy , 1975 .
[12] P. Dobson,et al. Oxidation, defects and vacancy diffusion in silicon , 1969 .