论文信息 - Activation of p-Type Dopants in 4H–SiC Using Hybrid Super-Rapid Thermal Annealing Equipment

Activation of p-Type Dopants in 4H–SiC Using Hybrid Super-Rapid Thermal Annealing Equipment

Rapid thermal annealing (RTA) on areas with diameters as large as 2 in. at high temperatures using hybrid super-RTA (HS-RTA) equipment is performed in this study. The HS-RTA equipment consists of an infrared annealing unit and an RF induction annealing unit for uniform annealing over a 2-in.-φ susceptor. As a result of annealing using the HS-RTA equipment, temperature is elevated from RT to a high temperature (1600–1800 °C) for less than 1 min. Using aluminum (Al)-implanted silicon carbide (SiC) samples, the performance of the HS-RTA equipment is evaluated. For Al-implanted samples annealed at 1700 °C, the sheet resistance distribution on the 2-in.-φ susceptor is 8.0%.

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