论文信息 - Growth and characterization of pendeo-epitaxial GaN(112¯0) on 4H–SiC(112¯0) substrates - 字舞流文

Growth and characterization of pendeo-epitaxial GaN(112¯0) on 4H–SiC(112¯0) substrates

R. Davis | Z. Liliental-Weber | Z. Reitmeier | B. Wagner | D. Zakharov | Ji-Soo Park | D. Bachelor