SiGe differential transimpedance amplifier with 50 GHz bandwidth

InP and SiGe technologies are both attractive for design of circuits operating at 40 GB/s and beyond. In this paper, we describe a fully differential SiGe transimpedance amplifier (TIA) suitable for differential phase-shift keying applications. The TIA exhibits 49 dB-/spl Omega/ transimpedance, greater than 50-GHz bandwidth, and input-referred current noise less than 30 pA//spl radic/Hz. For comparison, we have also developed a similar TIA in an InP double-heterostructure bipolar transistor technology. The InP TIA had 48 dB-/spl Omega/ transimpedance and 49-GHz bandwidth.

[1]  S. Jeng,et al.  Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology , 2002, IEEE Electron Device Letters.

[2]  G. Raybon,et al.  2.5 Tb/s (64/spl times/42.7 Gb/s) transmission over 40/spl times/100 km NZDSF using RZ-DPSK format and all-Raman-amplified spans , 2002, Optical Fiber Communication Conference and Exhibit.

[3]  R. Lai,et al.  InP and GaAs components for 40 Gbps applications , 2001, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191).

[4]  Y. Baeyens,et al.  High-performance and high-uniformity InP/InGaAs/InP DHBT technology for high-speed optical communication systems , 2002, 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu.

[5]  S. Chandrasekhar,et al.  A Si BiCMOS transimpedance amplifier for 10-Gb/s SONET receiver , 2001 .

[6]  S. D. Personick,et al.  Receiver design for optical fiber communication systems , 1980 .